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- Packaging：
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- Diode Type：
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- Voltage - Peak Reverse (Max)：
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- Current - Average Rectified (Io)：
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- Voltage - Forward (Vf) (Max) @ If：
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- Current - Reverse Leakage @ Vr：
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Найдено 5,331 продуктов
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Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | |
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Vishay Semiconductor Diodes Division |
152
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3 дн. |
-
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MIN: 1 Кратность: 1
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RECTIFIER BRIDGE 400V 35A D-34A
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，D-34 | D-34 | Chassis Mount | Standard | Single Phase | 400V | 35A | - | 10μA @ 400V | ||
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Vishay Semiconductor Diodes Division |
455
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3 дн. |
-
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MIN: 1 Кратность: 1
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RECTIFIER BRIDGE 1400V 25A D-34A
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，D-34 | D-34 | Chassis Mount | Standard | Single Phase | 1.4kV | 25A | - | 10μA @ 1400V | ||
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Vishay Semiconductor Diodes Division |
194
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3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE 3-PHA 400V 35A D-63
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Bulk | - | -55°C ~ 150°C (TJ) | 5-Square，D-63 | D-63 | Chassis Mount | Standard | Three Phase | 400V | 35A | - | 10μA @ 400V | ||
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Vishay Semiconductor Diodes Division |
164
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE 3-PHA 600V 35A D-63
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Bulk | - | -55°C ~ 150°C (TJ) | 5-Square，D-63 | D-63 | Chassis Mount | Standard | Three Phase | 600V | 35A | - | 10μA @ 600V | ||
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Vishay Semiconductor Diodes Division |
1,361
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3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE GPP 1A 600V 4SMD
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Tube | - | -55°C ~ 150°C (TJ) | 4-SMD，Gull Wing | DFS | Surface Mount | Standard | Single Phase | 600V | 1A | 1.1V @ 1A | 5μA @ 600V | ||
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Vishay Semiconductor Diodes Division |
1,700
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3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE GPP 1PH 4A 200V GBU
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Bulk | - | -55°C ~ 150°C (TJ) | 4-SIP，GBU | GBU | Through Hole | Standard | Single Phase | 200V | 2.3A | 1V @ 2A | 5μA @ 200V | ||
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Vishay Semiconductor Diodes Division |
1,200
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECTIFIER BRIDGE 800V 30A PB
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Tube | - | -55°C ~ 150°C (TJ) | 4-ESIP，PB | isoCINK+? PB | Through Hole | Standard | Single Phase | 800V | 30A | 1.1V @ 15A | 10μA @ 800V | ||
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GeneSiC Semiconductor |
992
|
3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 200V 25A GBPC-T/W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 200V | 25A | 1.1V @ 12.5A | 5μA @ 200V | ||
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GeneSiC Semiconductor |
979
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3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 600V 25A GBPC-T/W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC | GBPC | QC Terminal | Standard | Single Phase | 600V | 25A | 1.1V @ 12.5A | 5μA @ 600V | ||
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GeneSiC Semiconductor |
708
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3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 400V 25A GBPC-T/W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 400V | 25A | 1.1V @ 12.5A | 5μA @ 400V | ||
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GeneSiC Semiconductor |
997
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3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 800V 25A GBPC-T/W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC | GBPC | QC Terminal | Standard | Single Phase | 800V | 25A | 1.1V @ 12.5A | 5μA @ 800V | ||
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GeneSiC Semiconductor |
976
|
3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 200V 35A GBPC-T/W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-T | GBPC-T | QC Terminal | Standard | Single Phase | 200V | 35A | 1.1V @ 12.5A | 5μA @ 200V | ||
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GeneSiC Semiconductor |
962
|
3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 800V 25A GBPC-T/W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 800V | 25A | 1.1V @ 1.2A | 5μA @ 800V | ||
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GeneSiC Semiconductor |
202
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3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 1000V 25A GBPC-T/W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 1kV | 25A | 1.1V @ 12.5A | 5μA @ 1000V | ||
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Vishay Semiconductor Diodes Division |
200
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECTIFIER BRIDGE 12A 50V GBPC
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 50V | 12A | 1.1V @ 6A | 5μA @ 50V | ||
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Vishay Semiconductor Diodes Division |
140
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE 1-PH 800V 25A GBPC-A
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Tray | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-A | GBPC-A | Chassis Mount | Standard | Single Phase | 800V | 25A | - | 2mA @ 800V | ||
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Vishay Semiconductor Diodes Division |
197
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 35A 800V GBPCW
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Tray | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 800V | 35A | - | 2mA @ 800V | ||
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Vishay Semiconductor Diodes Division |
205
|
3 дн. |
-
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MIN: 1 Кратность: 1
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MOD IGBT 1600V 75A 3-PHASE MTP
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Bulk | - | -40°C ~ 150°C (TJ) | MTK | MTK | Chassis Mount | Standard | Three Phase | 1.6kV | 75A | - | - | ||
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Vishay Semiconductor Diodes Division |
103
|
3 дн. |
-
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MIN: 1 Кратность: 1
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MOD BRIDGE 3PH 75A 1600V MTP
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Tray | - | -40°C ~ 150°C (TJ) | 12-MTP Module | 12-MTP Pressfit | Chassis Mount | Standard | Three Phase | 1.6kV | 75A | - | - | ||
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Vishay Semiconductor Diodes Division |
105
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
MOD BRIDGE 3PH 100A 1600V MTP
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Tray | - | -40°C ~ 150°C (TJ) | 12-MTP Module | 12-MTP Pressfit | Chassis Mount | Standard | Three Phase | 1.6kV | 100A | 1.51V @ 100A | - |
