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- Packaging：
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- Supplier Device Package：
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- Technology：
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- Diode Type：
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- Voltage - Peak Reverse (Max)：
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- Current - Average Rectified (Io)：
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- Voltage - Forward (Vf) (Max) @ If：
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- Current - Reverse Leakage @ Vr：
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- Фильтр:
Найдено 5,331 продуктов
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Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | |
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Comchip Technology |
1,260
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3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 1000V 15A GBU
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Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GBU | GBU | Through Hole | Standard | Single Phase | 1kV | 15A | 1V @ 7.5A | 10μA @ 1000V | ||
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Vishay Semiconductor Diodes Division |
1,101
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3 дн. |
-
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MIN: 1 Кратность: 1
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RECTIFIER BRIDGE 800V 1.9A D-37
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Bulk | - | -40°C ~ 150°C (TJ) | 4-SIP，2KBB | 2KBB | Through Hole | Standard | Single Phase | 800V | 1.9A | 1.1V @ 1.9A | 10μA @ 800V | ||
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Diodes Incorporated |
1,486
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3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 100V 20A GBJ
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Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GBJ | GBJ | Through Hole | Standard | Single Phase | 100V | 20A | 1.05V @ 10A | 10μA @ 100V | ||
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Micro Commercial Co |
1,491
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3 дн. |
-
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MIN: 1 Кратность: 1
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IC RECT BRIDGE GPP 35A 400V GBJ
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Bulk | - | -55°C ~ 150°C (TJ) | 4-SIP，GBJ | GBJ | Through Hole | Standard | Single Phase | 400V | 35A | 1.05V @ 17.5A | 10μA @ 400V | ||
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Vishay Semiconductor Diodes Division |
1,052
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3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE 15A 800V GSIB-5S
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Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GSIB-5S | GSIB-5S | Through Hole | Standard | Single Phase | 800V | 3.5A | 950mV @ 7.5A | 10μA @ 800V | ||
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ON Semiconductor |
1,082
|
3 дн. |
-
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MIN: 1 Кратность: 1
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IC BRIDGE RECT 400V 25A TS6P-4
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Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，TS-6P | TS-6P | Through Hole | Standard | Single Phase | 400V | 25A | 1.1V @ 25A | 10μA @ 400V | ||
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Diodes Incorporated |
1,091
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 800V 25A GBJ
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Tube | - | -65°C ~ 150°C (TJ) | 4-SIP，GBJ | GBJ | Through Hole | Standard | Single Phase | 800V | 25A | 1.05V @ 12.5A | 10μA @ 800V | ||
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ON Semiconductor |
603
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3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 12A 400V GBPC
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Tray | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC | GBPC | Chassis Mount | Standard | Single Phase | 400V | 12A | 1.1V @ 6A | 5μA @ 400V | ||
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Vishay Semiconductor Diodes Division |
281
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECTIFIER BRIDGE 4A 400V KBU
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Bulk | - | -50°C ~ 150°C (TJ) | 4-SIP，KBU | KBU | Through Hole | Standard | Single Phase | 400V | 4A | 1V @ 4A | 5μA @ 400V | ||
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Vishay Semiconductor Diodes Division |
108
|
3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE 4A 600V KBU
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Bulk | - | -50°C ~ 150°C (TJ) | 4-SIP，KBU | KBU | Through Hole | Standard | Single Phase | 600V | 4A | 1V @ 4A | 5μA @ 600V | ||
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ON Semiconductor |
299
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3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 25A 400V GBPC-W
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Tray | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 400V | 25A | 1.1V @ 12.5A | 5μA @ 400V | ||
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ON Semiconductor |
330
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 15A 600V GBPC
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Tray | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC | GBPC | Chassis Mount | Standard | Single Phase | 600V | 15A | 1.1V @ 7.5A | 5μA @ 600V | ||
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ON Semiconductor |
243
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 15A 100V GBPC-W
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Tray | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 100V | 15A | 1.1V @ 7.5A | 5μA @ 100V | ||
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ON Semiconductor |
212
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 15A 400V GBPC-W
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Tray | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 400V | 15A | 1.1V @ 7.5A | 5μA @ 400V | ||
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ON Semiconductor |
379
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 35A 600V GBPC-W
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Tray | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 600V | 35A | 1.1V @ 17.5A | 5μA @ 600V | ||
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Comchip Technology |
217
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 800V 35A GBPCW
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 800V | 35A | 1.1V @ 17.5A | 10μA @ 800V | ||
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ON Semiconductor |
257
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 35A 100V GBPC
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Tray | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC | GBPC | Chassis Mount | Standard | Single Phase | 100V | 35A | 1.1V @ 17.5A | 5μA @ 100V | ||
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Vishay Semiconductor Diodes Division |
474
|
3 дн. |
-
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MIN: 1 Кратность: 1
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MOD BRIDGE 1PH 6A D-72
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Bulk | - | -40°C ~ 150°C (TJ) | 4-Square，D-72 | D-72 | Through Hole | Standard | Single Phase | 800V | 6A | - | 10μA @ 800V | ||
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Vishay Semiconductor Diodes Division |
1,090
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE 600V 40A PWR BRIDGE
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Tube | - | -55°C ~ 150°C (TJ) | 4-ESIP，PB | isoCINK+? PB | Through Hole | Standard | Single Phase | 600V | 40A | 1.1V @ 20A | 10μA @ 600V | ||
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Comchip Technology |
696
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE GPP 800V 50A GBPC
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Tray | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC | GBPC | Chassis Mount | Standard | Single Phase | 800V | 50A | 1.1V @ 25A | 10μA @ 800V |
