GeneSiC Semiconductor

GBPC3502T

Описание :
DIODE BRIDGE 200V 35A GBPC-T/W
Корпус :
GBPC-T
Current - Average Rectified (Io) :
35A
Current - Reverse Leakage @ Vr :
5μA @ 200V
Diode Type :
Single Phase
Mounting Type :
QC Terminal
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
4-Square,GBPC-T
Packaging :
Bulk
Series :
-
Supplier Device Package :
GBPC-T
Technology :
Standard
Voltage - Forward (Vf) (Max) @ If :
1.1V @ 12.5A
Voltage - Peak Reverse (Max) :
200V

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