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- Packaging：
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- Operating Temperature：
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- Supplier Device Package：
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- Technology：
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- Diode Type：
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- Voltage - Peak Reverse (Max)：
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- Current - Average Rectified (Io)：
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- Voltage - Forward (Vf) (Max) @ If：
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- Current - Reverse Leakage @ Vr：
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Найдено 5,331 продуктов
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Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | |
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GeneSiC Semiconductor |
937
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3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 400V 25A GBPC-T/W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC | GBPC | QC Terminal | Standard | Single Phase | 400V | 25A | 1.1V @ 12.5A | 5μA @ 400V | ||
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GeneSiC Semiconductor |
796
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3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 600V 25A GBPC-T/W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 600V | 25A | 1.1V @ 12.5A | 5μA @ 600V | ||
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GeneSiC Semiconductor |
1,008
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3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 800V 35A GBPC-T/W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 800V | 35A | 1.1V @ 17.5A | 5μA @ 800V | ||
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GeneSiC Semiconductor |
568
|
3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 1000V 35A GBPC-T/W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 1kV | 35A | 1.1V @ 17.5A | 5μA @ 1000V | ||
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Vishay Semiconductor Diodes Division |
371
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3 дн. |
-
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MIN: 1 Кратность: 1
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RECTIFIER BRIDGE 8A 800V KBU
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Bulk | - | -50°C ~ 150°C (TJ) | 4-SIP，KBU | KBU | Through Hole | Standard | Single Phase | 800V | 8A | 1V @ 8A | 10μA @ 800V | ||
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Vishay Semiconductor Diodes Division |
202
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECTIFIER BRIDGE 6A 800V KBU
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Bulk | - | -50°C ~ 150°C (TJ) | 4-SIP，KBU | KBU | Through Hole | Standard | Single Phase | 800V | 6A | 1V @ 6A | 5μA @ 800V | ||
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GeneSiC Semiconductor |
896
|
3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 400V 35A GBPC-T/W
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-T | GBPC-T | QC Terminal | Standard | Single Phase | 400V | 35A | 1.1V @ 12.5A | 5μA @ 400V | ||
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GeneSiC Semiconductor |
131
|
3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE BRIDGE 400V 35A GBPC-T/W
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 400V | 35A | 1.1V @ 17.5A | 5μA @ 400V | ||
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Vishay Semiconductor Diodes Division |
386
|
3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE 1PH 25A 400V GBPC-W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 400V | 25A | 1.1V @ 12.5A | 5μA @ 400V | ||
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Vishay Semiconductor Diodes Division |
241
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3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE 1PH 15A 800V GBPC-W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 800V | 15A | 1.1V @ 7.5A | 5μA @ 800V | ||
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Vishay Semiconductor Diodes Division |
200
|
3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE 1PH 15A 600V GBPC-W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 600V | 15A | 1.1V @ 7.5A | 5μA @ 600V | ||
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Micro Commercial Co |
482
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3 дн. |
-
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MIN: 1 Кратность: 1
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BRIDGE RECT 50A 600V GBPC
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC | GBPC | Chassis Mount | Standard | Single Phase | 600V | 50A | 1.1V @ 25A | 5μA @ 600V | ||
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Micro Commercial Co |
348
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3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE 50A 200V WIRE LEADS
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Bulk | - | -50°C ~ 150°C (TJ) | 4-Square，MP-50W | MP-50WW | Through Hole | Standard | Single Phase | 200V | 50A | 1.2V @ 25A | 10μA @ 200V | ||
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Vishay Semiconductor Diodes Division |
150
|
3 дн. |
-
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MIN: 1 Кратность: 1
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DIODE 1PH 35A 200V GBPC-W
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 200V | 35A | 1.1V @ 17.5A | 5μA @ 200V | ||
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Vishay Semiconductor Diodes Division |
226
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECTIFIER BRIDGE 35A 800V GBPC
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC | GBPC | Chassis Mount | Standard | Single Phase | 800V | 35A | 1.1V @ 17.5A | 5μA @ 800V | ||
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Vishay Semiconductor Diodes Division |
178
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECTIFIER BRIDGE 35A 100V GBPC
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC | GBPC | Chassis Mount | Standard | Single Phase | 100V | 35A | 1.1V @ 17.5A | 5μA @ 100V | ||
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Vishay Semiconductor Diodes Division |
131
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECTIFIER BRIDGE 35A 200V GBPC
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC | GBPC | Chassis Mount | Standard | Single Phase | 200V | 35A | 1.1V @ 17.5A | 5μA @ 200V | ||
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Texas Instruments |
132
|
3 дн. |
-
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MIN: 1 Кратность: 1
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IC SCHOTTKY DIODE BRIDGE 16-SOIC
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Tube | - | 0°C ~ 70°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Schottky | Single Phase | 50V | 3A | 1.3V @ 1A | 100μA @ 40V | ||
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Vishay Semiconductor Diodes Division |
187
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECT BRIDGE 1-PH 1000V 35A GBPCA
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，GBPC-A | GBPC-A | Chassis Mount | Standard | Single Phase | 1kV | 35A | - | 2mA @ 1000V | ||
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Vishay Semiconductor Diodes Division |
146
|
3 дн. |
-
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MIN: 1 Кратность: 1
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RECTIFIER BRIDGE 200V 35A D-34A
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Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，D-34 | D-34 | Chassis Mount | Standard | Single Phase | 200V | 35A | - | 10μA @ 200V |
