- Производитель:
-
- Packaging:
-
- Series:
-
- Operating Temperature:
-
- Package / Case:
-
- Supplier Device Package:
-
- Mounting Type:
-
- Technology:
-
- Diode Type:
-
- Voltage - Peak Reverse (Max):
-
- Current - Average Rectified (Io):
-
- Voltage - Forward (Vf) (Max) @ If:
-
- Current - Reverse Leakage @ Vr:
-
- Фильтр:
Найдено 5,331 продуктов
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | ||
Vishay Semiconductor Diodes Division |
9,873
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
DIODE GPP 1A 800V 4DIP
|
Tube | - | -55°C ~ 150°C (TJ) | 4-EDIP (0.300",7.62mm) | DFM | Through Hole | Standard | Single Phase | 800V | 1A | 1.1V @ 1A | 5μA @ 800V | ||||
Vishay Semiconductor Diodes Division |
2,507
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
DIODE GPP 1A 200V 4DIP
|
Tube | - | -55°C ~ 150°C (TJ) | 4-EDIP (0.300",7.62mm) | DFM | Through Hole | Standard | Single Phase | 200V | 1A | 1.1V @ 1A | 5μA @ 200V | ||||
Diodes Incorporated |
1,889
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 1000V 1.5A KBP
|
Tube | - | -65°C ~ 150°C (TJ) | 4-SIP,KBP | KBP | Through Hole | Standard | Single Phase | 1kV | 1.5A | 1.1V @ 1.5A | 5μA @ 1000V | ||||
Diodes Incorporated |
3,443
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 800V 1.5A KBP
|
Tube | - | -65°C ~ 150°C (TJ) | 4-SIP,KBP | KBP | Through Hole | Standard | Single Phase | 800V | 1.5A | 1.1V @ 1.5A | 5μA @ 800V | ||||
Vishay Semiconductor Diodes Division |
2,749
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECTIFIER BRIDGE 1AMP 400V DFS
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SMD,Gull Wing | DFS | Surface Mount | Standard | Single Phase | 400V | 1A | 1.1V @ 1A | 5μA @ 400V | ||||
Micro Commercial Co |
11,908
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC BRIDGE RECT 4A 1000V D3K
|
Tube | - | -55°C ~ 150°C (TJ) | 4-ESIP | D3K | Through Hole | Standard | Single Phase | 1kV | 4A | 1V @ 7.5A | 10μA @ 1000V | ||||
Micro Commercial Co |
2,342
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECTIFIER BRIDGE 1A 800V DB-1
|
Tube | - | -55°C ~ 150°C (TJ) | 4-EDIP (0.321",8.15mm) | DB-1 | Through Hole | Standard | Single Phase | 800V | 1A | 1.1V @ 1A | 10μA @ 800V | ||||
Micro Commercial Co |
1,080
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
DIODE BRIDGE 2A 600V KBPR
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-SIP,KBPR | KBPR | Through Hole | Standard | Single Phase | 600V | 1.5A | 1.1V @ 1.5A | 10μA @ 600V | ||||
Micro Commercial Co |
6,193
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECTIFIER BRIDGE 1A 1000V DB-1
|
Tube | - | -55°C ~ 150°C (TJ) | 4-EDIP (0.321",8.15mm) | DB-1 | Through Hole | Standard | Single Phase | 1kV | 1A | 1.1V @ 1A | 10μA @ 1000V | ||||
Micro Commercial Co |
2,335
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 4A 400V GBU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBU | GBU | Through Hole | Standard | Single Phase | 400V | 4A | 1V @ 2A | 5μA @ 400V | ||||
Diodes Incorporated |
3,746
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE SMD 200V 1A 4P DF-S
|
Tube | - | -65°C ~ 150°C (TJ) | 4-SMD,Gull Wing | DF-S | Surface Mount | Standard | Single Phase | 200V | 1A | 1.1V @ 1.5A | 10μA @ 200V | ||||
ON Semiconductor |
1,826
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 6A 400V GBU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBU | GBU | Through Hole | Standard | Single Phase | 400V | 6A | 1V @ 6A | 5μA @ 400V | ||||
ON Semiconductor |
1,699
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 4A 100V GBU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBU | GBU | Through Hole | Standard | Single Phase | 100V | 4A | 1V @ 4A | 5μA @ 100V | ||||
ON Semiconductor |
2,448
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 6A 800V GBU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBU | GBU | Through Hole | Standard | Single Phase | 800V | 6A | 1V @ 6A | 5μA @ 800V | ||||
Vishay Semiconductor Diodes Division |
1,134
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
DIODE GPP 1PH 3A 600V GBPC1
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC-1 | GBPC1 | Through Hole | Standard | Single Phase | 600V | 2A | 1V @ 1.5A | 5μA @ 600V | ||||
Micro Commercial Co |
2,392
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 15A 200V GBJ
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBJ | GBJ | Through Hole | Standard | Single Phase | 200V | 15A | 1.05V @ 7.5A | 10μA @ 200V | ||||
Diodes Incorporated |
1,339
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 400V 6A GBU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBU | GBU | Through Hole | Standard | Single Phase | 400V | 6A | 1V @ 3A | 5μA @ 400V | ||||
GeneSiC Semiconductor |
1,616
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
DIODE BRIDGE 1000V 6A KBU
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-SIP,KBU | KBU | Through Hole | Standard | Single Phase | 1kV | 6A | 1V @ 6A | 10μA @ 1000V | ||||
Diodes Incorporated |
1,195
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 100V 8A GBU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBU | GBU | Through Hole | Standard | Single Phase | 100V | 8A | 1V @ 4A | 5μA @ 100V | ||||
Micro Commercial Co |
2,025
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECTIFIER BRIDGE 6A 50V PB-6
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square,PB-6 | PB-6 | Through Hole | Standard | Single Phase | 50V | 6A | 1.1V @ 3A | 10μA @ 50V |