STS1DNC45
- Описание :
- MOSFET 2N-CH 450V 0.4A 8SOIC
- Корпус :
- 8-SO
- Соответствует RoHS
- Документация (1)
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- Current - Continuous Drain (Id) @ 25°C :
- 400mA
- Drain to Source Voltage (Vdss) :
- 450V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 160pF @ 25V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 8-SOIC (0.154",3.90mm Width)
- Packaging :
- Cut Tape (CT)
- Power - Max :
- 1.6W
- Rds On (Max) @ Id,Vgs :
- 4.5 Ohm @ 500mA,10V
- Series :
- SuperMESH
- Supplier Device Package :
- 8-SO
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA