STMicroelectronics

STS10DN3LH5

Описание :
MOSFET 2N-CH 30V 10A 8-SOIC
Корпус :
8-SO
Current - Continuous Drain (Id) @ 25°C :
10A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
4.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
475pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-SOIC (0.154",3.90mm Width)
Packaging :
Cut Tape (CT)
Power - Max :
2.5W
Rds On (Max) @ Id,Vgs :
21 mOhm @ 5A,10V
Series :
STripFET V
Supplier Device Package :
8-SO
Vgs(th) (Max) @ Id :
1V @ 250μA

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