APTM100H45SCTG

Current - Continuous Drain (Id) @ 25°C :

18A

Drain to Source Voltage (Vdss) :

1000V (1kV)

FET Feature :

Standard

FET Type :

4 N-Channel (H-Bridge)

Gate Charge (Qg) (Max) @ Vgs :

154nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4350pF @ 25V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

SP4

Packaging :

Bulk

Power - Max :

357W

Rds On (Max) @ Id，Vgs :

540 mOhm @ 9A，10V

Series :

POWER MOS 7

Supplier Device Package :

SP4

Vgs(th) (Max) @ Id :

5V @ 2.5mA