Microsemi Corporation

APTM100A13SCG

Описание :
MOSFET 2N-CH 1000V 65A SP6
Корпус :
SP6
Current - Continuous Drain (Id) @ 25°C :
65A
Drain to Source Voltage (Vdss) :
1000V (1kV)
FET Feature :
Standard
FET Type :
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs :
562nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
15200pF @ 25V
Mounting Type :
Chassis Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
SP6
Packaging :
Bulk
Power - Max :
1250W
Rds On (Max) @ Id,Vgs :
156 mOhm @ 32.5A,10V
Series :
-
Supplier Device Package :
SP6
Vgs(th) (Max) @ Id :
5V @ 6mA

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