Series:
Operating Temperature:
Logic Level - Low:
Logic Level - High:
Current - Output High, Low:
Max Propagation Delay @ V, Max CL:
Найдено 14 продуктов
Фото Наименование Производитель Количество Срок Цена КУПИТЬ Описание Packaging Series Voltage - Supply Operating Temperature Logic Type Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
7UL1G32FS,LF
Toshiba Semiconductor and Storage
10,000
3 дн.
-
MIN: 10000  Кратность: 1
L-MOS LVP SERIES SINGLE 2-INPUT
Tape & Reel (TR) 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) OR Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G32FS,LF
Toshiba Semiconductor and Storage
19,990
3 дн.
-
MIN: 1  Кратность: 1
L-MOS LVP SERIES SINGLE 2-INPUT
Cut Tape (CT) 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) OR Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G32FS,LF
Toshiba Semiconductor and Storage
19,990
3 дн.
-
MIN: 1  Кратность: 1
L-MOS LVP SERIES SINGLE 2-INPUT
- 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) OR Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G02FS,LF
Toshiba Semiconductor and Storage
10,000
3 дн.
-
MIN: 10000  Кратность: 1
L-MOS LVP SERIES SINGLE 2-INPUT
Tape & Reel (TR) 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) NOR Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G02FS,LF
Toshiba Semiconductor and Storage
17,750
3 дн.
-
MIN: 1  Кратность: 1
L-MOS LVP SERIES SINGLE 2-INPUT
Cut Tape (CT) 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) NOR Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G02FS,LF
Toshiba Semiconductor and Storage
17,750
3 дн.
-
MIN: 1  Кратность: 1
L-MOS LVP SERIES SINGLE 2-INPUT
- 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) NOR Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G08FS,LF
Toshiba Semiconductor and Storage
10,000
3 дн.
-
MIN: 10000  Кратность: 1
L-MOS LVP SERIES SINGLE 2-INPUT
Tape & Reel (TR) 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) AND Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G08FS,LF
Toshiba Semiconductor and Storage
19,978
3 дн.
-
MIN: 1  Кратность: 1
L-MOS LVP SERIES SINGLE 2-INPUT
Cut Tape (CT) 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) AND Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G08FS,LF
Toshiba Semiconductor and Storage
19,978
3 дн.
-
MIN: 1  Кратность: 1
L-MOS LVP SERIES SINGLE 2-INPUT
- 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) AND Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
TC7SZ32AFS,L3F
Toshiba Semiconductor and Storage
По запросу
-
-
MIN: 10000  Кратность: 1
IC GATE OR 1CH 2-INP FSV
Tape & Reel (TR) TC7SZ 1.65 V ~ 5.5 V -40°C ~ 85°C OR Gate - - 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ32AFS,L3F
Toshiba Semiconductor and Storage
3,710
3 дн.
-
MIN: 1  Кратность: 1
IC GATE OR 1CH 2-INP FSV
Cut Tape (CT) TC7SZ 1.65 V ~ 5.5 V -40°C ~ 85°C OR Gate - - 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ32AFS,L3F
Toshiba Semiconductor and Storage
3,710
3 дн.
-
MIN: 1  Кратность: 1
IC GATE OR 1CH 2-INP FSV
- TC7SZ 1.65 V ~ 5.5 V -40°C ~ 85°C OR Gate - - 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ08AFS(TPL3)
Toshiba Semiconductor and Storage
736
3 дн.
-
MIN: 1  Кратность: 1
IC GATE AND 1CH 2-INP FSV
Cut Tape (CT) TC7SZ 1.65 V ~ 5.5 V -40°C ~ 85°C AND Gate - - 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ08AFS(TPL3)
Toshiba Semiconductor and Storage
По запросу
-
-
MIN: 1  Кратность: 1
IC GATE AND 1CH 2-INP FSV
- TC7SZ 1.65 V ~ 5.5 V -40°C ~ 85°C AND Gate - - 32mA,32mA 3.6ns @ 5V,50pF