Логика - Ворота и Инверторы - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Operating Temperature：

Features：

Number of Inputs：

Current - Quiescent (Max)：

Logic Type：

Logic Level - Low：

Logic Level - High：

Current - Output High, Low：

Max Propagation Delay @ V, Max CL：

Фото	Наименование	Производитель	Количество	Срок	Цена	КУПИТЬ	Описание	Packaging	Series	Voltage - Supply	Operating Temperature	Features	Number of Inputs	Current - Quiescent (Max)	Logic Type	Logic Level - Low	Logic Level - High	Current - Output High, Low	Max Propagation Delay @ V, Max CL
Фото	Наименование	Производитель	Количество	Срок	Цена	КУПИТЬ	Описание	Packaging	Series	Voltage - Supply	Operating Temperature	Features	Number of Inputs	Current - Quiescent (Max)	Logic Type	Logic Level - Low	Logic Level - High	Current - Output High, Low	Max Propagation Delay @ V, Max CL
	7UL1G32FS,LF	Toshiba Semiconductor and Storage	10,000	3 дн.	-	L-MOS LVP SERIES SINGLE 2-INPUT MIN: 10000 Кратность: 1	L-MOS LVP SERIES SINGLE 2-INPUT	Tape & Reel (TR)	7UL	0.9 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	2	1μA	OR Gate	0.1 V ~ 0.4 V	0.75 V ~ 2.48 V	8mA，8mA	4.4ns @ 3.6V，30pF
	7UL1G32FS,LF	Toshiba Semiconductor and Storage	19,990	3 дн.	-	L-MOS LVP SERIES SINGLE 2-INPUT MIN: 1 Кратность: 1	L-MOS LVP SERIES SINGLE 2-INPUT	Cut Tape (CT)	7UL	0.9 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	2	1μA	OR Gate	0.1 V ~ 0.4 V	0.75 V ~ 2.48 V	8mA，8mA	4.4ns @ 3.6V，30pF
	7UL1G32FS,LF	Toshiba Semiconductor and Storage	19,990	3 дн.	-	L-MOS LVP SERIES SINGLE 2-INPUT MIN: 1 Кратность: 1	L-MOS LVP SERIES SINGLE 2-INPUT	-	7UL	0.9 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	2	1μA	OR Gate	0.1 V ~ 0.4 V	0.75 V ~ 2.48 V	8mA，8mA	4.4ns @ 3.6V，30pF
	7UL1G02FS,LF	Toshiba Semiconductor and Storage	10,000	3 дн.	-	L-MOS LVP SERIES SINGLE 2-INPUT MIN: 10000 Кратность: 1	L-MOS LVP SERIES SINGLE 2-INPUT	Tape & Reel (TR)	7UL	0.9 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	2	1μA	NOR Gate	0.1 V ~ 0.4 V	0.75 V ~ 2.48 V	8mA，8mA	4.4ns @ 3.6V，30pF
	7UL1G02FS,LF	Toshiba Semiconductor and Storage	17,750	3 дн.	-	L-MOS LVP SERIES SINGLE 2-INPUT MIN: 1 Кратность: 1	L-MOS LVP SERIES SINGLE 2-INPUT	Cut Tape (CT)	7UL	0.9 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	2	1μA	NOR Gate	0.1 V ~ 0.4 V	0.75 V ~ 2.48 V	8mA，8mA	4.4ns @ 3.6V，30pF
	7UL1G02FS,LF	Toshiba Semiconductor and Storage	17,750	3 дн.	-	L-MOS LVP SERIES SINGLE 2-INPUT MIN: 1 Кратность: 1	L-MOS LVP SERIES SINGLE 2-INPUT	-	7UL	0.9 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	2	1μA	NOR Gate	0.1 V ~ 0.4 V	0.75 V ~ 2.48 V	8mA，8mA	4.4ns @ 3.6V，30pF
	7UL1G08FS,LF	Toshiba Semiconductor and Storage	10,000	3 дн.	-	L-MOS LVP SERIES SINGLE 2-INPUT MIN: 10000 Кратность: 1	L-MOS LVP SERIES SINGLE 2-INPUT	Tape & Reel (TR)	7UL	0.9 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	2	1μA	AND Gate	0.1 V ~ 0.4 V	0.75 V ~ 2.48 V	8mA，8mA	4.4ns @ 3.6V，30pF
	7UL1G08FS,LF	Toshiba Semiconductor and Storage	19,978	3 дн.	-	L-MOS LVP SERIES SINGLE 2-INPUT MIN: 1 Кратность: 1	L-MOS LVP SERIES SINGLE 2-INPUT	Cut Tape (CT)	7UL	0.9 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	2	1μA	AND Gate	0.1 V ~ 0.4 V	0.75 V ~ 2.48 V	8mA，8mA	4.4ns @ 3.6V，30pF
	7UL1G08FS,LF	Toshiba Semiconductor and Storage	19,978	3 дн.	-	L-MOS LVP SERIES SINGLE 2-INPUT MIN: 1 Кратность: 1	L-MOS LVP SERIES SINGLE 2-INPUT	-	7UL	0.9 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	2	1μA	AND Gate	0.1 V ~ 0.4 V	0.75 V ~ 2.48 V	8mA，8mA	4.4ns @ 3.6V，30pF
	TC7SZ32AFS,L3F	Toshiba Semiconductor and Storage	По запросу	-	-	IC GATE OR 1CH 2-INP FSV MIN: 10000 Кратность: 1	IC GATE OR 1CH 2-INP FSV	Tape & Reel (TR)	TC7SZ	1.65 V ~ 5.5 V	-40°C ~ 85°C	-	2	1μA	OR Gate	-	-	32mA，32mA	3.6ns @ 5V，50pF
	TC7SZ32AFS,L3F	Toshiba Semiconductor and Storage	3,710	3 дн.	-	IC GATE OR 1CH 2-INP FSV MIN: 1 Кратность: 1	IC GATE OR 1CH 2-INP FSV	Cut Tape (CT)	TC7SZ	1.65 V ~ 5.5 V	-40°C ~ 85°C	-	2	1μA	OR Gate	-	-	32mA，32mA	3.6ns @ 5V，50pF
	TC7SZ32AFS,L3F	Toshiba Semiconductor and Storage	3,710	3 дн.	-	IC GATE OR 1CH 2-INP FSV MIN: 1 Кратность: 1	IC GATE OR 1CH 2-INP FSV	-	TC7SZ	1.65 V ~ 5.5 V	-40°C ~ 85°C	-	2	1μA	OR Gate	-	-	32mA，32mA	3.6ns @ 5V，50pF
	TC7SZ08AFS(TPL3)	Toshiba Semiconductor and Storage	736	3 дн.	-	IC GATE AND 1CH 2-INP FSV MIN: 1 Кратность: 1	IC GATE AND 1CH 2-INP FSV	Cut Tape (CT)	TC7SZ	1.65 V ~ 5.5 V	-40°C ~ 85°C	-	2	1μA	AND Gate	-	-	32mA，32mA	3.6ns @ 5V，50pF
	TC7SZ08AFS(TPL3)	Toshiba Semiconductor and Storage	По запросу	-	-	IC GATE AND 1CH 2-INP FSV MIN: 1 Кратность: 1	IC GATE AND 1CH 2-INP FSV	-	TC7SZ	1.65 V ~ 5.5 V	-40°C ~ 85°C	-	2	1μA	AND Gate	-	-	32mA，32mA	3.6ns @ 5V，50pF
	TC7SH08FS,L3F	Toshiba Semiconductor and Storage	8,205	3 дн.	-	IC GATE AND 1CH 2-INP FSV MIN: 1 Кратность: 1	IC GATE AND 1CH 2-INP FSV	Cut Tape (CT)	TC7SH	2 V ~ 5.5 V	-40°C ~ 85°C	-	2	2μA	AND Gate	0.5V	1.5V	8mA，8mA	7.9ns @ 5V，50pF
	TC7SH08FS,L3F	Toshiba Semiconductor and Storage	По запросу	-	-	IC GATE AND 1CH 2-INP FSV MIN: 1 Кратность: 1	IC GATE AND 1CH 2-INP FSV	-	TC7SH	2 V ~ 5.5 V	-40°C ~ 85°C	-	2	2μA	AND Gate	0.5V	1.5V	8mA，8mA	7.9ns @ 5V，50pF
	TC7SH32FS,L3F	Toshiba Semiconductor and Storage	7,379	3 дн.	-	IC GATE OR 1CH 2-INP FSV MIN: 1 Кратность: 1	IC GATE OR 1CH 2-INP FSV	Cut Tape (CT)	TC7SH	2 V ~ 5.5 V	-40°C ~ 85°C	-	2	2μA	OR Gate	0.5V	1.5V	8mA，8mA	7.5ns @ 5V，50pF
	TC7SH32FS,L3F	Toshiba Semiconductor and Storage	По запросу	-	-	IC GATE OR 1CH 2-INP FSV MIN: 1 Кратность: 1	IC GATE OR 1CH 2-INP FSV	-	TC7SH	2 V ~ 5.5 V	-40°C ~ 85°C	-	2	2μA	OR Gate	0.5V	1.5V	8mA，8mA	7.5ns @ 5V，50pF
	TC7SZ04AFS,L3J	Toshiba Semiconductor and Storage	По запросу	-	-	IC INVERTER 1CH 1-INP FSV MIN: 10000 Кратность: 1	IC INVERTER 1CH 1-INP FSV	Tape & Reel (TR)	TC7SZ	1.65 V ~ 5.5 V	-40°C ~ 125°C	-	1	2μA	Inverter	-	-	32mA，32mA	3.6ns @ 5V，50pF
	TC7SH00FSTPL3	Toshiba Semiconductor and Storage	По запросу	-	-	IC GATE NAND 1CH 2-INP FSV MIN: 10000 Кратность: 1	IC GATE NAND 1CH 2-INP FSV	Tape & Reel (TR)	TC7SH	2 V ~ 5.5 V	-40°C ~ 85°C	-	2	2μA	NAND Gate	0.5V	1.5V	8mA，8mA	7.5ns @ 5V，50pF

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