Найдено 87 продуктов
Фото Наименование Производитель Количество Срок Цена КУПИТЬ Описание Packaging Series Interface Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Features Memory Size Time Format Voltage - Supply, Battery Current - Timekeeping (Max)
DS1315S-5+
Maxim Integrated
391
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 16-SOIC
Tube - Parallel 4.5 V ~ 5.5 V 0°C ~ 70°C 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Leap Year - HH:MM:SS:hh (12/24 hr) 2.5 V ~ 3.7 V 1.3mA @ 5V
DS1243Y-120+
Maxim Integrated
662
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 28-DIP
Tube - Parallel 4.5 V ~ 5.5 V 0°C ~ 70°C 28-DIP Module (0.600",15.24mm) 28-EDIP Through Hole Leap Year - HH:MM:SS:hh (12/24 hr) - 7mA @ 3.3V
DS1244Y-70+
Maxim Integrated
888
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 28-DIP
Tube - Parallel 4.5 V ~ 5.5 V 0°C ~ 70°C 28-DIP Module (0.600",15.24mm) 28-EDIP Through Hole Leap Year,NVSRAM 32KB HH:MM:SS:hh (12/24 hr) - 10mA @ 5V
DS1248Y-70+
Maxim Integrated
314
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 32-DIP
Tube - Parallel 4.5 V ~ 5.5 V 0°C ~ 70°C 32-DIP Module (0.600",15.24mm) 32-EDIP Through Hole NVSRAM 128KB HH:MM:SS:hh (12/24 hr) - 10mA @ 5V
DS1248YP-70+
Maxim Integrated
237
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 34-PCM
Tray - Parallel 4.5 V ~ 5.5 V 0°C ~ 70°C 34-PowerCap? Module 34-PowerCap Module Surface Mount NVSRAM 128KB HH:MM:SS:hh (12/24 hr) 3V 10mA @ 5V
DS1251Y-70+
Maxim Integrated
144
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 32-DIP
Tube - Parallel 4.5 V ~ 5.5 V 0°C ~ 70°C 32-DIP Module (0.600",15.24mm) 32-EDIP Through Hole Leap Year,NVSRAM 512KB HH:MM:SS:hh (12/24 hr) - 10mA @ 5V
DS1315S-33+
Maxim Integrated
130
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 16-SOIC
Tube - Parallel 3 V ~ 3.6 V 0°C ~ 70°C 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Leap Year - HH:MM:SS:hh (12/24 hr) 2.5 V ~ 3.7 V 1.1mA @ 3.3V
DS1315E-33+
Maxim Integrated
104
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 20-TSSOP
Tube - Parallel 3 V ~ 3.6 V 0°C ~ 70°C 20-TSSOP (0.173",4.40mm Width) 20-TSSOP Surface Mount Leap Year - HH:MM:SS:hh (12/24 hr) 2.5 V ~ 3.7 V 1.1mA @ 3.3V
DS1315-33+
Maxim Integrated
167
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 16-DIP
Tube - Parallel 3 V ~ 3.6 V 0°C ~ 70°C 16-DIP (0.300",7.62mm) 16-PDIP Through Hole Leap Year - HH:MM:SS:hh (12/24 hr) 2.5 V ~ 3.7 V 1.1mA @ 3.3V
DS1315SN-5+
Maxim Integrated
887
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 16-SOIC
Tube - Parallel 4.5 V ~ 5.5 V -40°C ~ 85°C 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Leap Year - HH:MM:SS:hh (12/24 hr) 2.5 V ~ 3.7 V 1.3mA @ 5V
DS1315SN-33+
Maxim Integrated
669
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 16-SOIC
Tube - Parallel 3 V ~ 3.6 V -40°C ~ 85°C 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Leap Year - HH:MM:SS:hh (12/24 hr) 2.5 V ~ 3.7 V 1.1mA @ 3.3V
DS1315EN-5+
Maxim Integrated
108
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 20-TSSOP
Tube - Parallel 4.5 V ~ 5.5 V -40°C ~ 85°C 20-TSSOP (0.173",4.40mm Width) 20-TSSOP Surface Mount Leap Year - HH:MM:SS:hh (12/24 hr) 2.5 V ~ 3.7 V 1.3mA @ 5V
DS1248Y-70IND+
Maxim Integrated
28
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 32-DIP
Tube - Parallel 4.5 V ~ 5.5 V -40°C ~ 85°C 32-DIP Module (0.600",15.24mm) 32-EDIP Through Hole NVSRAM 128KB HH:MM:SS:hh (12/24 hr) - 10mA @ 5V
DS1315-5+
Maxim Integrated
72
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 16-DIP
Tube - Parallel 4.5 V ~ 5.5 V 0°C ~ 70°C 16-DIP (0.300",7.62mm) 16-PDIP Through Hole Leap Year - HH:MM:SS:hh (12/24 hr) 2.5 V ~ 3.7 V 1.3mA @ 5V
DS1244W-120+
Maxim Integrated
23
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 28-DIP
Tube - Parallel 2.97 V ~ 3.63 V 0°C ~ 70°C 28-DIP Module (0.600",15.24mm) 28-EDIP Through Hole Leap Year,NVSRAM 32KB HH:MM:SS:hh (12/24 hr) - 7mA @ 3.3V
DS1244W-120IND+
Maxim Integrated
24
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 28-DIP
Tube - Parallel 2.97 V ~ 3.63 V -40°C ~ 85°C 28-DIP Module (0.600",15.24mm) 28-EDIP Through Hole Leap Year,NVSRAM 32KB HH:MM:SS:hh (12/24 hr) - 7mA @ 3.3V
DS1315E-5+
Maxim Integrated
67
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 20-TSSOP
Tube - Parallel 4.5 V ~ 5.5 V 0°C ~ 70°C 20-TSSOP (0.173",4.40mm Width) 20-TSSOP Surface Mount Leap Year - HH:MM:SS:hh (12/24 hr) 2.5 V ~ 3.7 V 1.3mA @ 5V
DS1315EN-33+
Maxim Integrated
93
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 20-TSSOP
Tube - Parallel 3 V ~ 3.6 V -40°C ~ 85°C 20-TSSOP (0.173",4.40mm Width) 20-TSSOP Surface Mount Leap Year - HH:MM:SS:hh (12/24 hr) 2.5 V ~ 3.7 V 1.1mA @ 3.3V
DS1315N-33+
Maxim Integrated
50
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 16-DIP
Tube - Parallel 3 V ~ 3.6 V -40°C ~ 85°C 16-DIP (0.300",7.62mm) 16-PDIP Through Hole Leap Year - HH:MM:SS:hh (12/24 hr) 2.5 V ~ 3.7 V 1.1mA @ 3.3V
DS1244WP-120+
Maxim Integrated
80
3 дн.
-
MIN: 1  Кратность: 1
IC RTC PHANTOM PAR 34-PCM
Tray - Parallel 2.97 V ~ 3.63 V 0°C ~ 70°C 34-PowerCap? Module 34-PowerCap Module Surface Mount Leap Year,NVSRAM 32KB HH:MM:SS:hh (12/24 hr) 3V 7mA @ 3.3V