- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Features：
-
- Current - Timekeeping (Max)：
-
Найдено 25 продуктов
 |
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Features | Memory Size | Current - Timekeeping (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Features | Memory Size | Current - Timekeeping (Max) | |
|
|
|
Maxim Integrated |
662
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC RTC PHANTOM PAR 28-DIP
|
- | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | Leap Year | - | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
888
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC RTC PHANTOM PAR 28-DIP
|
- | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | Leap Year，NVSRAM | 32KB | 10mA @ 5V | ||
|
|
|
Maxim Integrated |
314
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | NVSRAM | 128KB | 10mA @ 5V | ||
|
|
|
Maxim Integrated |
144
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | Leap Year，NVSRAM | 512KB | 10mA @ 5V | ||
|
|
|
Maxim Integrated |
28
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 4.5 V ~ 5.5 V | -40°C ~ 85°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | NVSRAM | 128KB | 10mA @ 5V | ||
|
|
|
Maxim Integrated |
23
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC RTC PHANTOM PAR 28-DIP
|
- | 2.97 V ~ 3.63 V | 0°C ~ 70°C | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | Leap Year，NVSRAM | 32KB | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
24
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC RTC PHANTOM PAR 28-DIP
|
- | 2.97 V ~ 3.63 V | -40°C ~ 85°C | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | Leap Year，NVSRAM | 32KB | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
21
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 2.97 V ~ 3.63 V | 0°C ~ 70°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | NVSRAM | 128KB | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
22
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 2.97 V ~ 3.63 V | 0°C ~ 70°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | Leap Year，NVSRAM | 512KB | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
16
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 2.97 V ~ 3.63 V | -40°C ~ 85°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | NVSRAM | 128KB | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
По запросу
|
- |
-
|
MIN: 20 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 2.97 V ~ 3.63 V | -40°C ~ 85°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | Leap Year，NVSRAM | 512KB | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
По запросу
|
- |
-
|
MIN: 24 Кратность: 1
|
IC RTC PHANTOM PAR 28-DIP
|
- | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | Leap Year | - | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
По запросу
|
- |
-
|
MIN: 24 Кратность: 1
|
IC RTC PHANTOM PAR 28-DIP
|
- | 2.97 V ~ 3.63 V | -40°C ~ 85°C | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | Leap Year，NVSRAM | 32KB | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
По запросу
|
- |
-
|
MIN: 22 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 2.97 V ~ 3.63 V | 0°C ~ 70°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | NVSRAM | 128KB | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
По запросу
|
- |
-
|
MIN: 22 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 4.5 V ~ 5.5 V | -40°C ~ 85°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | NVSRAM | 128KB | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
По запросу
|
- |
-
|
MIN: 22 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 2.97 V ~ 3.63 V | -40°C ~ 85°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | NVSRAM | 128KB | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
По запросу
|
- |
-
|
MIN: 22 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 2.97 V ~ 3.63 V | 0°C ~ 70°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | Leap Year，NVSRAM | 512KB | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
По запросу
|
- |
-
|
MIN: 22 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | Leap Year，NVSRAM | 512KB | 10mA @ 5V | ||
|
|
|
Maxim Integrated |
По запросу
|
- |
-
|
MIN: 22 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 2.97 V ~ 3.63 V | -40°C ~ 85°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | Leap Year，NVSRAM | 512KB | 7mA @ 3.3V | ||
|
|
|
Maxim Integrated |
По запросу
|
- |
-
|
MIN: 22 Кратность: 1
|
IC RTC PHANTOM PAR 32-DIP
|
- | 4.5 V ~ 5.5 V | -40°C ~ 85°C | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | NVSRAM | 128KB | 10mA @ 5V |
