- Производитель:
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- Packaging:
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- Series:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Technology:
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- Diode Type:
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- Voltage - Peak Reverse (Max):
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- Current - Average Rectified (Io):
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- Voltage - Forward (Vf) (Max) @ If:
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- Current - Reverse Leakage @ Vr:
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Найдено 5,331 продуктов
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | ||
ON Semiconductor |
2,674
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 12A 100V GBPC-W
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 100V | 12A | 1.1V @ 6A | 5μA @ 100V | ||||
Vishay Semiconductor Diodes Division |
868
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECTIFIER BRIDGE 4A 200V KBU
|
Bulk | - | -50°C ~ 150°C (TJ) | 4-SIP,KBU | KBU | Through Hole | Standard | Single Phase | 200V | 4A | 1V @ 4A | 5μA @ 200V | ||||
ON Semiconductor |
510
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 15A 600V GBPC-W
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 600V | 15A | 1.1V @ 7.5A | 5μA @ 600V | ||||
ON Semiconductor |
502
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
DIODE BRIDGE GPP 25A 200V GBPC
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC | GBPC | Chassis Mount | Standard | Single Phase | 200V | 25A | 1.1V @ 12.5A | 5μA @ 200V | ||||
ON Semiconductor |
358
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 25A 400V GBPC
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC | GBPC | Chassis Mount | Standard | Single Phase | 400V | 25A | 1.1V @ 12.5A | 5μA @ 400V | ||||
ON Semiconductor |
164
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 25A 600V GBPC
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC | GBPC | Chassis Mount | Standard | Single Phase | 600V | 25A | 1.1V @ 12.5A | 5μA @ 600V | ||||
ON Semiconductor |
130
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 15A 200V GBPC
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC | GBPC | Chassis Mount | Standard | Single Phase | 200V | 15A | 1.1V @ 7.5A | 5μA @ 200V | ||||
Vishay Semiconductor Diodes Division |
4,100
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
MOD BRIDGE 1PH 8A D-72
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square,D-72 | D-72 | Through Hole | Standard | Single Phase | 200V | 8A | 1V @ 3A | 10μA @ 200V | ||||
Vishay Semiconductor Diodes Division |
2,402
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECTIFIER BRIDGE 1000V 35A PB
|
Tube | - | -55°C ~ 150°C (TJ) | 4-ESIP,PB | isoCINK+? PB | Through Hole | Standard | Single Phase | 1kV | 35A | 1.1V @ 17.5A | 10μA @ 1000V | ||||
Comchip Technology |
1,625
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 600V 35A GBPC
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC | GBPC | Chassis Mount | Standard | Single Phase | 600V | 35A | - | 10μA @ 600V | ||||
ON Semiconductor |
876
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 35A 400V GBPC-W
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 400V | 35A | 1.1V @ 17.5A | 5μA @ 400V | ||||
ON Semiconductor |
432
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 35A 1000V GBPC-W
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 1kV | 35A | 1.1V @ 17.5A | 5μA @ 1000V | ||||
ON Semiconductor |
357
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 35A 200V GBPC-W
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 200V | 35A | 1.1V @ 17.5A | 5μA @ 200V | ||||
ON Semiconductor |
252
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 35A 800V GBPC-W
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 800V | 35A | 1.1V @ 17.5A | 5μA @ 800V | ||||
Comchip Technology |
124
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
BRIDGE DIODE GPP 50A 600V KBPC
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square,KBPC | KBPC | Chassis Mount | Standard | Single Phase | 600V | 50A | 1.1V @ 25A | 10μA @ 600V | ||||
ON Semiconductor |
606
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 35A 800V GBPC
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC | GBPC | Chassis Mount | Standard | Single Phase | 800V | 35A | 1.1V @ 17.5A | 5μA @ 800V | ||||
ON Semiconductor |
458
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 35A 400V GBPC
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC | GBPC | Chassis Mount | Standard | Single Phase | 400V | 35A | - | 5μA @ 400V | ||||
ON Semiconductor |
362
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 35A 600V GBPC
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC | GBPC | Chassis Mount | Standard | Single Phase | 600V | 35A | 1.1V @ 17.5A | 5μA @ 600V | ||||
Comchip Technology |
1,714
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 600V 50A GBPC
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC | GBPC | Chassis Mount | Standard | Single Phase | 600V | 50A | 1.1V @ 25A | 10μA @ 600V | ||||
Comchip Technology |
836
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 600V 50A GBPCW
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 600V | 50A | 1.1V @ 25A | 10μA @ 600V |