- Производитель：
-
- Packaging：
-
- Series：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Technology：
-
- Diode Type：
-
- Voltage - Peak Reverse (Max)：
-
- Current - Average Rectified (Io)：
-
- Voltage - Forward (Vf) (Max) @ If：
-
- Current - Reverse Leakage @ Vr：
-
- Фильтр:
Найдено 5,331 продуктов
 |
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | |
|
|
|
Diodes Incorporated |
4,036
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 4A 600V GBU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GBU | GBU | Through Hole | Standard | Single Phase | 600V | 4A | 1V @ 2A | 5μA @ 600V | ||
|
|
|
Diodes Incorporated |
2,671
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 100V 4A GBU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GBU | GBU | Through Hole | Standard | Single Phase | 100V | 4A | 1V @ 2A | 5μA @ 100V | ||
|
|
|
GeneSiC Semiconductor |
2,418
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
DIODE BRIDGE 200V 6A KBU
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-SIP，KBU | KBU | Through Hole | Standard | Single Phase | 200V | 6A | 1V @ 6A | 10μA @ 200V | ||
|
|
|
Diodes Incorporated |
1,749
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 200V 8A GBU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GBU | GBU | Through Hole | Standard | Single Phase | 200V | 8A | 1V @ 4A | 5μA @ 200V | ||
|
|
|
Micro Commercial Co |
1,669
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECTIFIER BRIDGE 6A 200V PB-6
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，PB-6 | PB-6 | Through Hole | Standard | Single Phase | 200V | 6A | 1.1V @ 3A | 10μA @ 200V | ||
|
|
|
GeneSiC Semiconductor |
1,475
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
DIODE BRIDGE 1000V 8A KBU
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-SIP，KBU | KBU | Through Hole | Standard | Single Phase | 1kV | 8A | 1V @ 8A | 10μA @ 1000V | ||
|
|
|
GeneSiC Semiconductor |
1,020
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
DIODE BRIDGE 600V 8A KBU
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-SIP，KBU | KBU | Through Hole | Standard | Single Phase | 600V | 8A | 1V @ 8A | 10μA @ 600V | ||
|
|
|
Micro Commercial Co |
2,040
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECTIFIER BRIDGE 6A 600V PB-6
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square，PB-6 | PB-6 | Through Hole | Standard | Single Phase | 600V | 6A | 1.1V @ 3A | 10μA @ 600V | ||
|
|
|
Diodes Incorporated |
50,461
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 1000V 10A GBJ
|
Tube | - | -65°C ~ 150°C (TJ) | 4-SIP，GBJ | GBJ | Through Hole | Standard | Single Phase | 1kV | 10A | 1.05V @ 5A | 10μA @ 1000V | ||
|
|
|
Comchip Technology |
1,080
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE CELL 1000V 10A KBU
|
Tray | - | -55°C ~ 150°C (TJ) | 4-SIP，KBU | KBU | Through Hole | Standard | Single Phase | 1kV | 10A | 1V @ 5A | 10μA @ 1000V | ||
|
|
|
Micro Commercial Co |
3,077
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 25A 800V GBJ
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GBJ | GBJ | Through Hole | Standard | Single Phase | 800V | 25A | 1.05V @ 12.5A | 10μA @ 800V | ||
|
|
|
Micro Commercial Co |
1,366
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 25A 600V GBJ
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GBJ | GBJ | Through Hole | Standard | Single Phase | 600V | 25A | 1.05V @ 12.5A | 10μA @ 600V | ||
|
|
|
Diodes Incorporated |
1,191
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GPP 400V 25A GBJ
|
Tube | - | -65°C ~ 150°C (TJ) | 4-SIP，GBJ | GBJ | Through Hole | Standard | Single Phase | 400V | 25A | 1.05V @ 12.5A | 10μA @ 400V | ||
|
|
|
Micro Commercial Co |
2,734
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
BRIDGE RECTIFIER 35A 800V GBJ
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GBJ | GBJ | Through Hole | Standard | Single Phase | 800V | 35A | 1.05V @ 17.5A | 10μA @ 800V | ||
|
|
|
Micro Commercial Co |
2,573
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
BRIDGE RECTIFIER 35A 600V GBJ
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GBJ | GBJ | Through Hole | Standard | Single Phase | 600V | 35A | 1.05V @ 17.5A | 10μA @ 600V | ||
|
|
|
Vishay Semiconductor Diodes Division |
1,982
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
DIODE 15A 600V GSIB-5S
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GSIB-5S | GSIB-5S | Through Hole | Standard | Single Phase | 600V | 3.5A | 950mV @ 7.5A | 10μA @ 600V | ||
|
|
|
Diodes Incorporated |
1,765
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECT BRIDGE GP 25A 1000V TH-HOLE
|
Tube | - | -65°C ~ 150°C (TJ) | 4-SIP，GBJ | GBJ | Through Hole | Standard | Single Phase | 1kV | 25A | 1.05V @ 12.5A | 10μA @ 1000V | ||
|
|
|
Vishay Semiconductor Diodes Division |
1,149
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
RECTIFIER BRIDGE 1000V 20A BU
|
Tray | - | -55°C ~ 150°C (TJ) | 4-SIP，BU | isoCINK+? BU | Through Hole | Standard | Single Phase | 1kV | 3.5A | 1.05V @ 10A | 5μA @ 1000V | ||
|
|
|
Vishay Semiconductor Diodes Division |
1,871
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
DIODE 25A 800V GSIB-5S
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GSIB-5S | GSIB-5S | Through Hole | Standard | Single Phase | 800V | 3.5A | 1V @ 12.5A | 10μA @ 800V | ||
|
|
|
Micro Commercial Co |
14,910
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
50A，600V BRIDGE RECTIFIER，GBJ
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP，GBJ | GBJ | Through Hole | Standard | Single Phase | 600V | 50A | 1.1V @ 25A | 10μA @ 600V |
