S07J-GS08
- Описание :
- DIODE GEN PURP 600V 1.5A DO219AB
- Корпус :
- DO-219AB (SMF)
- Соответствует RoHS
- Документация (1)
- Добавить в избранное
- Добавить к сравнению
- Capacitance @ Vr,F :
- 4pF @ 4V,1MHz
- Current - Average Rectified (Io) :
- 1.5A
- Current - Reverse Leakage @ Vr :
- 10μA @ 600V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-219AB
- Packaging :
- -
- Reverse Recovery Time (trr) :
- 1.8μs
- Series :
- -
- Speed :
- Standard Recovery >500ns,> 200mA (Io)
- Supplier Device Package :
- DO-219AB (SMF)
- Voltage - DC Reverse (Vr) (Max) :
- 600V
- Voltage - Forward (Vf) (Max) @ If :
- 1.1V @ 1A