Vishay Semiconductor Diodes Division

PB5010-E3/45

Описание :
DIODE BRIDGE 1000V 4.5A ENH PB
Корпус :
isoCINK+? PB
Current - Average Rectified (Io) :
4.5A
Current - Reverse Leakage @ Vr :
10μA @ 1000V
Diode Type :
Single Phase
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
4-ESIP,PB
Packaging :
Tube
Series :
isoCink+
Supplier Device Package :
isoCINK+? PB
Technology :
Standard
Voltage - Forward (Vf) (Max) @ If :
1.1V @ 22.5A
Voltage - Peak Reverse (Max) :
1kV

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