Toshiba Semiconductor and Storage

RN1901FETE85LF

Описание :
TRANS 2NPN PREBIAS 0.1W ES6
Корпус :
ES6
Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic,Vce :
30 @ 10mA,5V
Frequency - Transition :
250MHz
Mounting Type :
Surface Mount
Package / Case :
SOT-563,SOT-666
Packaging :
Cut Tape (CT)
Power - Max :
100mW
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
4.7 kOhms
Series :
-
Supplier Device Package :
ES6
Transistor Type :
2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib,Ic :
300mV @ 250μA,5mA
Voltage - Collector Emitter Breakdown (Max) :
50V

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