EMD62T2R
- Описание :
- TRANS NPN/PNP PREBIAS 0.15W EMT6
- Корпус :
- EMT6
- Соответствует RoHS
- Документация (1)
- Добавить в избранное
- Добавить к сравнению
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic,Vce :
- 80 @ 5mA,10V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563,SOT-666
- Packaging :
- Cut Tape (CT)
- Power - Max :
- 150mW
- Resistor - Base (R1) :
- 47 kOhms
- Resistor - Emitter Base (R2) :
- 47 kOhms
- Series :
- -
- Supplier Device Package :
- EMT6
- Transistor Type :
- 1 NPN,1 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib,Ic :
- 150mV @ 500μA,5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V