ROHM Semiconductor

EMD62T2R

Описание :
TRANS NPN/PNP PREBIAS 0.15W EMT6
Корпус :
EMT6
Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic,Vce :
80 @ 5mA,10V
Frequency - Transition :
250MHz
Mounting Type :
Surface Mount
Package / Case :
SOT-563,SOT-666
Packaging :
Cut Tape (CT)
Power - Max :
150mW
Resistor - Base (R1) :
47 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
Series :
-
Supplier Device Package :
EMT6
Transistor Type :
1 NPN,1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib,Ic :
150mV @ 500μA,5mA
Voltage - Collector Emitter Breakdown (Max) :
50V

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