ON Semiconductor

MJ11012G

Описание :
TRANS NPN DARL 60V 30A TO-3
Корпус :
TO-3
Current - Collector (Ic) (Max) :
30A
Current - Collector Cutoff (Max) :
1mA
DC Current Gain (hFE) (Min) @ Ic,Vce :
1000 @ 20A,5V
Frequency - Transition :
4MHz
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 200°C (TJ)
Package / Case :
TO-204AA,TO-3
Packaging :
Tray
Power - Max :
200W
Series :
-
Supplier Device Package :
TO-3
Transistor Type :
NPN - Darlington
Vce Saturation (Max) @ Ib,Ic :
4V @ 300mA,30A
Voltage - Collector Emitter Breakdown (Max) :
60V

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