ON Semiconductor

1N914

Описание :
DIODE GEN PURP 100V 200MA DO35
Корпус :
DO-35
Capacitance @ Vr,F :
4pF @ 0V,1MHz
Current - Average Rectified (Io) :
200mA
Current - Reverse Leakage @ Vr :
5μA @ 75V
Diode Type :
Standard
Mounting Type :
Through Hole
Operating Temperature - Junction :
-65°C ~ 175°C
Package / Case :
DO-204AH,DO-35,Axial
Packaging :
Bulk
Reverse Recovery Time (trr) :
4ns
Series :
-
Speed :
Small Signal =< 200mA (Io),Any Speed
Supplier Device Package :
DO-35
Voltage - DC Reverse (Vr) (Max) :
100V
Voltage - Forward (Vf) (Max) @ If :
1V @ 10mA

Аналоги