NXP USA Inc.

BFR31,215

Описание :
JFET N-CH 10MA 250MW SOT23
Корпус :
SOT-23 (TO-236AB)
Current - Drain (Idss) @ Vds (Vgs=0) :
1mA @ 10V
Current Drain (Id) - Max :
10mA
Drain to Source Voltage (Vdss) :
25V
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
4pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-236-3,SC-59,SOT-23-3
Packaging :
Cut Tape (CT)
Power - Max :
250mW
Resistance - RDS(On) :
-
Series :
-
Supplier Device Package :
SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS) :
-
Voltage - Cutoff (VGS off) @ Id :
2.5V @ 0.5nA

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