PMGD280UN,115
- Описание :
- MOSFET 2N-CH 20V 0.87A 6TSSOP
- Корпус :
- 6-TSSOP
- Соответствует RoHS
- Документация (1)
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- Current - Continuous Drain (Id) @ 25°C :
- 870mA
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 0.89nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 45pF @ 20V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-TSSOP,SC-88,SOT-363
- Packaging :
- Cut Tape (CT)
- Power - Max :
- 400mW
- Rds On (Max) @ Id,Vgs :
- 340 mOhm @ 200mA,4.5V
- Series :
- TrenchMOS
- Supplier Device Package :
- 6-TSSOP
- Vgs(th) (Max) @ Id :
- 1V @ 250μA