Nexperia USA Inc.

PMGD280UN,115

Описание :
MOSFET 2N-CH 20V 0.87A 6TSSOP
Корпус :
6-TSSOP
Current - Continuous Drain (Id) @ 25°C :
870mA
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
0.89nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
45pF @ 20V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
6-TSSOP,SC-88,SOT-363
Packaging :
Cut Tape (CT)
Power - Max :
400mW
Rds On (Max) @ Id,Vgs :
340 mOhm @ 200mA,4.5V
Series :
TrenchMOS
Supplier Device Package :
6-TSSOP
Vgs(th) (Max) @ Id :
1V @ 250μA

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