TC6320K6-G
- Описание :
- MOSFET N/P-CH 200V 8VDFN
- Корпус :
- 8-DFN (4x4)
- Соответствует RoHS
- Документация (0)
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- Current - Continuous Drain (Id) @ 25°C :
- -
- Drain to Source Voltage (Vdss) :
- 200V
- FET Feature :
- Standard
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 110pF @ 25V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-VDFN Exposed Pad
- Packaging :
- Cut Tape (CT)
- Power - Max :
- -
- Rds On (Max) @ Id,Vgs :
- 7 Ohm @ 1A,10V
- Series :
- -
- Supplier Device Package :
- 8-DFN (4x4)
- Vgs(th) (Max) @ Id :
- 2V @ 1mA