Microchip Technology

TC6320K6-G

Описание :
MOSFET N/P-CH 200V 8VDFN
Корпус :
8-DFN (4x4)
Current - Continuous Drain (Id) @ 25°C :
-
Drain to Source Voltage (Vdss) :
200V
FET Feature :
Standard
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-VDFN Exposed Pad
Packaging :
Cut Tape (CT)
Power - Max :
-
Rds On (Max) @ Id,Vgs :
7 Ohm @ 1A,10V
Series :
-
Supplier Device Package :
8-DFN (4x4)
Vgs(th) (Max) @ Id :
2V @ 1mA

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