6A10-TP

Описание :
DIODE GEN PURP 1KV 6A R6
Корпус :
R-6
Capacitance @ Vr,F :
150pF @ 4V,1MHz
Current - Average Rectified (Io) :
6A
Current - Reverse Leakage @ Vr :
10μA @ 1000V
Diode Type :
Standard
Mounting Type :
Through Hole
Operating Temperature - Junction :
-55°C ~ 125°C
Package / Case :
R6,Axial
Packaging :
Tape & Reel (TR)
Reverse Recovery Time (trr) :
-
Series :
-
Speed :
Standard Recovery >500ns,> 200mA (Io)
Supplier Device Package :
R-6
Voltage - DC Reverse (Vr) (Max) :
1000V
Voltage - Forward (Vf) (Max) @ If :
950mV @ 6A

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