6A10-TP
- Описание :
- DIODE GEN PURP 1KV 6A R6
- Корпус :
- R-6
- Соответствует RoHS
- Документация (1)
- Добавить в избранное
- Добавить к сравнению
- Capacitance @ Vr,F :
- 150pF @ 4V,1MHz
- Current - Average Rectified (Io) :
- 6A
- Current - Reverse Leakage @ Vr :
- 10μA @ 1000V
- Diode Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -55°C ~ 125°C
- Package / Case :
- R6,Axial
- Packaging :
- Tape & Reel (TR)
- Reverse Recovery Time (trr) :
- -
- Series :
- -
- Speed :
- Standard Recovery >500ns,> 200mA (Io)
- Supplier Device Package :
- R-6
- Voltage - DC Reverse (Vr) (Max) :
- 1000V
- Voltage - Forward (Vf) (Max) @ If :
- 950mV @ 6A