GeneSiC Semiconductor

GBL02

Описание :
DIODE BRIDGE 200V 4 A- GBL
Корпус :
GBL
Current - Average Rectified (Io) :
4A
Current - Reverse Leakage @ Vr :
5μA @ 200V
Diode Type :
Single Phase
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
4-SIP,GBL
Packaging :
Bulk
Series :
-
Supplier Device Package :
GBL
Technology :
Standard
Voltage - Forward (Vf) (Max) @ If :
1.1V @ 4A
Voltage - Peak Reverse (Max) :
200V

Аналоги