ALD210800ASCL

Описание :
MOSFET 4N-CH 10.6V 0.08A 16SOIC
Корпус :
16-SOIC
Current - Continuous Drain (Id) @ 25°C :
80mA
Drain to Source Voltage (Vdss) :
10.6V
FET Feature :
Logic Level Gate
FET Type :
4 N-Channel,Matched Pair
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
15pF @ 5V
Mounting Type :
Surface Mount
Operating Temperature :
0°C ~ 70°C (TJ)
Package / Case :
16-SOIC (0.154",3.90mm Width)
Packaging :
Tube
Power - Max :
500mW
Rds On (Max) @ Id,Vgs :
25 Ohm
Series :
EPAD,Zero Threshold
Supplier Device Package :
16-SOIC
Vgs(th) (Max) @ Id :
10mV @ 10μA

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