Number of Circuits:
Number of Inputs:
Current - Quiescent (Max):
Найдено 725 продуктов
Фото Наименование Производитель Количество Срок Цена КУПИТЬ Описание Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Number of Circuits Mounting Type Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
TC7S32F,LF
Toshiba Semiconductor and Storage
4,574
3 дн.
-
MIN: 1  Кратность: 1
IC GATE OR 1CH 2-INP SMV
- TC7S 2 V ~ 6 V -40°C ~ 85°C SC-74A,SOT-753 SMV 1 Surface Mount - 2 1μA OR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 2.6mA,2.6mA 17ns @ 6V,50pF
TC7S00FU,LF
Toshiba Semiconductor and Storage
6,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE NAND 1CH 2-INP USV
Tape & Reel (TR) TC7S 2 V ~ 6 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV 1 Surface Mount - 2 1μA NAND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 2.6mA,2.6mA 17ns @ 6V,50pF
TC7S00FU,LF
Toshiba Semiconductor and Storage
7,798
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NAND 1CH 2-INP USV
Cut Tape (CT) TC7S 2 V ~ 6 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV 1 Surface Mount - 2 1μA NAND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 2.6mA,2.6mA 17ns @ 6V,50pF
TC7S00FU,LF
Toshiba Semiconductor and Storage
7,798
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NAND 1CH 2-INP USV
- TC7S 2 V ~ 6 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV 1 Surface Mount - 2 1μA NAND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 2.6mA,2.6mA 17ns @ 6V,50pF
74HC02D
Toshiba Semiconductor and Storage
2,500
3 дн.
-
MIN: 2500  Кратность: 1
IC GATE NOR 4CH 2-INP 14SOIC
Tape & Reel (TR) 74HC 2 V ~ 6 V -40°C ~ 85°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount - 2 1μA NOR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 16ns @ 6V,50pF
74HC02D
Toshiba Semiconductor and Storage
2,513
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NOR 4CH 2-INP 14SOIC
Cut Tape (CT) 74HC 2 V ~ 6 V -40°C ~ 85°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount - 2 1μA NOR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 16ns @ 6V,50pF
74HC02D
Toshiba Semiconductor and Storage
2,513
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NOR 4CH 2-INP 14SOIC
- 74HC 2 V ~ 6 V -40°C ~ 85°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount - 2 1μA NOR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 16ns @ 6V,50pF
74HC132D
Toshiba Semiconductor and Storage
2,500
3 дн.
-
MIN: 2500  Кратность: 1
IC GATE NAND SCHMITT 4CH 14SOIC
Tape & Reel (TR) 74HC 2 V ~ 6 V -40°C ~ 85°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount Schmitt Trigger 2 1μA NAND Gate - - 5.2mA,5.2mA 19ns @ 5V,50pF
74HC132D
Toshiba Semiconductor and Storage
3,835
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NAND SCHMITT 4CH 14SOIC
Cut Tape (CT) 74HC 2 V ~ 6 V -40°C ~ 85°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount Schmitt Trigger 2 1μA NAND Gate - - 5.2mA,5.2mA 19ns @ 5V,50pF
74HC132D
Toshiba Semiconductor and Storage
3,835
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NAND SCHMITT 4CH 14SOIC
- 74HC 2 V ~ 6 V -40°C ~ 85°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount Schmitt Trigger 2 1μA NAND Gate - - 5.2mA,5.2mA 19ns @ 5V,50pF
TC7S32FU,LF
Toshiba Semiconductor and Storage
9,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE OR 1CH 2-INP USV
Tape & Reel (TR) TC7S 2 V ~ 6 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV 1 Surface Mount - 2 1μA OR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 2.6mA,2.6mA 17ns @ 6V,50pF
TC7S32FU,LF
Toshiba Semiconductor and Storage
12,393
3 дн.
-
MIN: 1  Кратность: 1
IC GATE OR 1CH 2-INP USV
Cut Tape (CT) TC7S 2 V ~ 6 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV 1 Surface Mount - 2 1μA OR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 2.6mA,2.6mA 17ns @ 6V,50pF
TC7S32FU,LF
Toshiba Semiconductor and Storage
12,393
3 дн.
-
MIN: 1  Кратность: 1
IC GATE OR 1CH 2-INP USV
- TC7S 2 V ~ 6 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV 1 Surface Mount - 2 1μA OR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 2.6mA,2.6mA 17ns @ 6V,50pF
74HC04D
Toshiba Semiconductor and Storage
2,500
3 дн.
-
MIN: 2500  Кратность: 1
IC INVERTER 6CH 6-INP 14SOIC
Tape & Reel (TR) 74HC 2 V ~ 6 V -40°C ~ 125°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 6 Surface Mount - 6 1μA Inverter 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 13ns @ 6V,50pF
74HC04D
Toshiba Semiconductor and Storage
3,964
3 дн.
-
MIN: 1  Кратность: 1
IC INVERTER 6CH 6-INP 14SOIC
Cut Tape (CT) 74HC 2 V ~ 6 V -40°C ~ 125°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 6 Surface Mount - 6 1μA Inverter 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 13ns @ 6V,50pF
74HC04D
Toshiba Semiconductor and Storage
3,964
3 дн.
-
MIN: 1  Кратность: 1
IC INVERTER 6CH 6-INP 14SOIC
- 74HC 2 V ~ 6 V -40°C ~ 125°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 6 Surface Mount - 6 1μA Inverter 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 13ns @ 6V,50pF
74HC32D
Toshiba Semiconductor and Storage
2,500
3 дн.
-
MIN: 2500  Кратность: 1
IC GATE OR 4CH 2-INP 14SOIC
Tape & Reel (TR) 74HC 2 V ~ 6 V -40°C ~ 125°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount - 2 1μA OR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 13ns @ 6V,50pF
74HC32D
Toshiba Semiconductor and Storage
2,662
3 дн.
-
MIN: 1  Кратность: 1
IC GATE OR 4CH 2-INP 14SOIC
Cut Tape (CT) 74HC 2 V ~ 6 V -40°C ~ 125°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount - 2 1μA OR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 13ns @ 6V,50pF
74HC32D
Toshiba Semiconductor and Storage
2,662
3 дн.
-
MIN: 1  Кратность: 1
IC GATE OR 4CH 2-INP 14SOIC
- 74HC 2 V ~ 6 V -40°C ~ 125°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount - 2 1μA OR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 13ns @ 6V,50pF
TC7W14FU,LF
Toshiba Semiconductor and Storage
12,000
3 дн.
-
MIN: 3000  Кратность: 1
IC INVERTER SCHMITT 3CH SSOP8
Tape & Reel (TR) TC7W 2 V ~ 6 V -40°C ~ 85°C 8-TSSOP,8-MSOP (0.110",2.80mm Width) 8-SSOP-P 3 Surface Mount Schmitt Trigger 3 1μA Inverter 0.3 V ~ 1.5 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 21ns @ 6V,50pF