Производитель:
Number of Circuits:
Number of Inputs:
Current - Quiescent (Max):
Найдено 966 продуктов
Фото Наименование Производитель Количество Срок Цена КУПИТЬ Описание Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Number of Circuits Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - Low Current - Output High, Low Max Propagation Delay @ V, Max CL
74AUP2G86DC,125
Nexperia USA Inc.
9,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE XOR 2CH 2-INP 8VSSOP
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 8-VFSOP (0.091",2.30mm Width) 8-VSSOP 2 - 2 500nA XOR (Exclusive OR) 0.7 V ~ 0.9 V 4mA,4mA 7.1ns @ 3.3V,30pF
74AUP2G86DC,125
Nexperia USA Inc.
11,631
3 дн.
-
MIN: 1  Кратность: 1
IC GATE XOR 2CH 2-INP 8VSSOP
Cut Tape (CT) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 8-VFSOP (0.091",2.30mm Width) 8-VSSOP 2 - 2 500nA XOR (Exclusive OR) 0.7 V ~ 0.9 V 4mA,4mA 7.1ns @ 3.3V,30pF
74AUP2G86DC,125
Nexperia USA Inc.
11,631
3 дн.
-
MIN: 1  Кратность: 1
IC GATE XOR 2CH 2-INP 8VSSOP
- 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 8-VFSOP (0.091",2.30mm Width) 8-VSSOP 2 - 2 500nA XOR (Exclusive OR) 0.7 V ~ 0.9 V 4mA,4mA 7.1ns @ 3.3V,30pF
SN74AUP2G00DCUR
Texas Instruments
12,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE NAND 2CH 2-INP US8
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 85°C 8-VFSOP (0.091",2.30mm Width) US8 2 - 2 500nA NAND Gate 0.7 V ~ 0.9 V 4mA,4mA 6.7ns @ 3.3V,30pF
SN74AUP2G00DCUR
Texas Instruments
16,866
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NAND 2CH 2-INP US8
Cut Tape (CT) 74AUP 0.8 V ~ 3.6 V -40°C ~ 85°C 8-VFSOP (0.091",2.30mm Width) US8 2 - 2 500nA NAND Gate 0.7 V ~ 0.9 V 4mA,4mA 6.7ns @ 3.3V,30pF
SN74AUP2G00DCUR
Texas Instruments
16,866
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NAND 2CH 2-INP US8
- 74AUP 0.8 V ~ 3.6 V -40°C ~ 85°C 8-VFSOP (0.091",2.30mm Width) US8 2 - 2 500nA NAND Gate 0.7 V ~ 0.9 V 4mA,4mA 6.7ns @ 3.3V,30pF
NC7SV02P5X
ON Semiconductor
12,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE NOR 1CH 2-INP SC70-5
Tape & Reel (TR) 7SV 0.9 V ~ 3.6 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 SC-70-5 1 - 2 900nA NOR Gate 0.7 V ~ 0.8 V 24mA,24mA 3.3ns @ 3V,30pF
NC7SV02P5X
ON Semiconductor
13,175
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NOR 1CH 2-INP SC70-5
Cut Tape (CT) 7SV 0.9 V ~ 3.6 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 SC-70-5 1 - 2 900nA NOR Gate 0.7 V ~ 0.8 V 24mA,24mA 3.3ns @ 3V,30pF
NC7SV02P5X
ON Semiconductor
13,175
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NOR 1CH 2-INP SC70-5
- 7SV 0.9 V ~ 3.6 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 SC-70-5 1 - 2 900nA NOR Gate 0.7 V ~ 0.8 V 24mA,24mA 3.3ns @ 3V,30pF
74AUP1G06FS3-7
Diodes Incorporated
5,000
3 дн.
-
MIN: 5000  Кратность: 1
IC INVERTER 1CH 1-INP 4X2DFN
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 4-XFDFN Exposed Pad 4-X2DFN (0.8x0.8) 1 Open Drain 1 500nA Inverter 0.7 V ~ 0.9 V -,4mA 10.5ns @ 3.3V,30pF
74AUP1G06FS3-7
Diodes Incorporated
5,000
3 дн.
-
MIN: 1  Кратность: 1
IC INVERTER 1CH 1-INP 4X2DFN
Cut Tape (CT) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 4-XFDFN Exposed Pad 4-X2DFN (0.8x0.8) 1 Open Drain 1 500nA Inverter 0.7 V ~ 0.9 V -,4mA 10.5ns @ 3.3V,30pF
74AUP1G06FS3-7
Diodes Incorporated
5,000
3 дн.
-
MIN: 1  Кратность: 1
IC INVERTER 1CH 1-INP 4X2DFN
- 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 4-XFDFN Exposed Pad 4-X2DFN (0.8x0.8) 1 Open Drain 1 500nA Inverter 0.7 V ~ 0.9 V -,4mA 10.5ns @ 3.3V,30pF
74AUP2G06FZ4-7
Diodes Incorporated
5,000
3 дн.
-
MIN: 5000  Кратность: 1
IC INVERTER 2CH 2-INP DFN1410-6
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1410-6 2 Open Drain 2 500nA Inverter 0.7 V ~ 0.9 V -,4mA 10.6ns @ 3.3V,30pF
74AUP2G06FZ4-7
Diodes Incorporated
5,000
3 дн.
-
MIN: 1  Кратность: 1
IC INVERTER 2CH 2-INP DFN1410-6
Cut Tape (CT) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1410-6 2 Open Drain 2 500nA Inverter 0.7 V ~ 0.9 V -,4mA 10.6ns @ 3.3V,30pF
74AUP2G06FZ4-7
Diodes Incorporated
5,000
3 дн.
-
MIN: 1  Кратность: 1
IC INVERTER 2CH 2-INP DFN1410-6
- 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1410-6 2 Open Drain 2 500nA Inverter 0.7 V ~ 0.9 V -,4mA 10.6ns @ 3.3V,30pF
74AUP1G08FW5-7
Diodes Incorporated
5,000
3 дн.
-
MIN: 5000  Кратность: 1
IC GATE AND 1CH 2-INP DFN1010-6
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XDFN X1-DFN1010-6 1 - 2 500nA AND Gate 0.7 V ~ 0.9 V 4mA,4mA 6.2ns @ 3.3V,30pF
74AUP1G08FW5-7
Diodes Incorporated
11,150
3 дн.
-
MIN: 1  Кратность: 1
IC GATE AND 1CH 2-INP DFN1010-6
Cut Tape (CT) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XDFN X1-DFN1010-6 1 - 2 500nA AND Gate 0.7 V ~ 0.9 V 4mA,4mA 6.2ns @ 3.3V,30pF
74AUP1G08FW5-7
Diodes Incorporated
11,150
3 дн.
-
MIN: 1  Кратность: 1
IC GATE AND 1CH 2-INP DFN1010-6
- 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XDFN X1-DFN1010-6 1 - 2 500nA AND Gate 0.7 V ~ 0.9 V 4mA,4mA 6.2ns @ 3.3V,30pF
SN74AUP1G02DPWR
Texas Instruments
10,948
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NOR 1CH 2-INP 4X2SON
Cut Tape (CT) 74AUP 0.8 V ~ 3.6 V -40°C ~ 85°C 4-XFDFN Exposed Pad 4-X2SON (0.8x0.8) 1 - 2 500nA NOR Gate 0.7 V ~ 0.9 V 4mA,4mA 6.4ns @ 3.3V,30pF
SN74AUP1G02DPWR
Texas Instruments
10,948
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NOR 1CH 2-INP 4X2SON
- 74AUP 0.8 V ~ 3.6 V -40°C ~ 85°C 4-XFDFN Exposed Pad 4-X2SON (0.8x0.8) 1 - 2 500nA NOR Gate 0.7 V ~ 0.9 V 4mA,4mA 6.4ns @ 3.3V,30pF