Найдено 84 продуктов
Фото Наименование Производитель Количество Срок Цена КУПИТЬ Описание Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Features Number of Inputs Current - Quiescent (Max) Logic Type Current - Output High, Low Max Propagation Delay @ V, Max CL
TC7SZ08FU,LJ(CT
Toshiba Semiconductor and Storage
15,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE AND 1CH 2-INP USV
Tape & Reel (TR) 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA AND Gate 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ08FU,LJ(CT
Toshiba Semiconductor and Storage
16,168
3 дн.
-
MIN: 1  Кратность: 1
IC GATE AND 1CH 2-INP USV
Cut Tape (CT) 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA AND Gate 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ08FU,LJ(CT
Toshiba Semiconductor and Storage
16,168
3 дн.
-
MIN: 1  Кратность: 1
IC GATE AND 1CH 2-INP USV
- 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA AND Gate 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ04FU,LJ(CT
Toshiba Semiconductor and Storage
12,000
3 дн.
-
MIN: 3000  Кратность: 1
IC INVERTER 1CH 1-INP USV
Tape & Reel (TR) 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 1 2μA Inverter 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ04FU,LJ(CT
Toshiba Semiconductor and Storage
14,524
3 дн.
-
MIN: 1  Кратность: 1
IC INVERTER 1CH 1-INP USV
Cut Tape (CT) 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 1 2μA Inverter 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ04FU,LJ(CT
Toshiba Semiconductor and Storage
14,524
3 дн.
-
MIN: 1  Кратность: 1
IC INVERTER 1CH 1-INP USV
- 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 1 2μA Inverter 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ32FU,LJ(CT
Toshiba Semiconductor and Storage
3,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE OR 1CH 2-INP USV
Tape & Reel (TR) 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA OR Gate 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ32FU,LJ(CT
Toshiba Semiconductor and Storage
6,138
3 дн.
-
MIN: 1  Кратность: 1
IC GATE OR 1CH 2-INP USV
Cut Tape (CT) 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA OR Gate 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ32FU,LJ(CT
Toshiba Semiconductor and Storage
6,138
3 дн.
-
MIN: 1  Кратность: 1
IC GATE OR 1CH 2-INP USV
- 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA OR Gate 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ00FU,LJ(CT
Toshiba Semiconductor and Storage
9,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE NAND 1CH 2-INP USV
Tape & Reel (TR) 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA NAND Gate 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ00FU,LJ(CT
Toshiba Semiconductor and Storage
11,621
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NAND 1CH 2-INP USV
Cut Tape (CT) 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA NAND Gate 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ00FU,LJ(CT
Toshiba Semiconductor and Storage
11,621
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NAND 1CH 2-INP USV
- 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA NAND Gate 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ08FE,LJ(CT
Toshiba Semiconductor and Storage
8,000
3 дн.
-
MIN: 4000  Кратность: 1
IC GATE AND 1CH 2-INP ESV
Tape & Reel (TR) 1.65 V ~ 5.5 V -40°C ~ 85°C SOT-553 ESV - 2 2μA AND Gate 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ08FE,LJ(CT
Toshiba Semiconductor and Storage
8,286
3 дн.
-
MIN: 1  Кратность: 1
IC GATE AND 1CH 2-INP ESV
Cut Tape (CT) 1.65 V ~ 5.5 V -40°C ~ 85°C SOT-553 ESV - 2 2μA AND Gate 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ08FE,LJ(CT
Toshiba Semiconductor and Storage
8,286
3 дн.
-
MIN: 1  Кратность: 1
IC GATE AND 1CH 2-INP ESV
- 1.65 V ~ 5.5 V -40°C ~ 85°C SOT-553 ESV - 2 2μA AND Gate 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ02FU,LJ(CT
Toshiba Semiconductor and Storage
3,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE NOR 1CH 2-INP USV
Tape & Reel (TR) 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA NOR Gate 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ02FU,LJ(CT
Toshiba Semiconductor and Storage
3,452
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NOR 1CH 2-INP USV
Cut Tape (CT) 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA NOR Gate 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ02FU,LJ(CT
Toshiba Semiconductor and Storage
3,452
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NOR 1CH 2-INP USV
- 1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA NOR Gate 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ02FE,LJ(CT
Toshiba Semiconductor and Storage
4,000
3 дн.
-
MIN: 4000  Кратность: 1
IC GATE NOR 1CH 2-INP ESV
Tape & Reel (TR) 1.65 V ~ 5.5 V -40°C ~ 85°C SOT-553 ESV - 2 2μA NOR Gate 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ02FE,LJ(CT
Toshiba Semiconductor and Storage
4,416
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NOR 1CH 2-INP ESV
Cut Tape (CT) 1.65 V ~ 5.5 V -40°C ~ 85°C SOT-553 ESV - 2 2μA NOR Gate 32mA,32mA 4.3ns @ 5V,50pF