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- Series：
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- Voltage - Supply：
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- Supplier Device Package：
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- Features：
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- Current - Quiescent (Max)：
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- Logic Level - Low：
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- Logic Level - High：
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- Current - Output High, Low：
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Найдено 113 продуктов
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Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Features | Number of Inputs | Current - Quiescent (Max) | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Features | Number of Inputs | Current - Quiescent (Max) | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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Nexperia USA Inc. |
5,000
|
3 дн. |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 1CH 2-INP 6XSON
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 6-XSON (1x1) | Open Drain | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | -，4mA | 12.7ns @ 3.3V，30pF | ||
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|
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Nexperia USA Inc. |
7,525
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP 6XSON
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 6-XSON (1x1) | Open Drain | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | -，4mA | 12.7ns @ 3.3V，30pF | ||
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|
|
Nexperia USA Inc. |
7,525
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP 6XSON
|
- | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 6-XSON (1x1) | Open Drain | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | -，4mA | 12.7ns @ 3.3V，30pF | ||
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Diodes Incorporated |
10,000
|
3 дн. |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN1410-6
|
Tape & Reel (TR) | 74LVCE | 1.4 V ~ 5.5 V | -40°C ~ 85°C | X2-DFN1410-6 | - | 2 | 10μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 3.6ns @ 5V，50pF | ||
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Diodes Incorporated |
5,000
|
3 дн. |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN1410-6
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN1410-6 | - | 2 | 200μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 5.5ns @ 5V，50pF | ||
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|
Diodes Incorporated |
4,027
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN1410-6
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN1410-6 | - | 2 | 200μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 5.5ns @ 5V，50pF | ||
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Diodes Incorporated |
По запросу
|
- |
-
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MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN1410-6
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN1410-6 | - | 2 | 200μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 5.5ns @ 5V，50pF | ||
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Diodes Incorporated |
5,000
|
3 дн. |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 1CH 3-INP DFN1010-6
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN1010-6 | - | 3 | 40μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 4.3ns @ 5V，50pF | ||
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|
Diodes Incorporated |
4,315
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 3-INP DFN1010-6
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN1010-6 | - | 3 | 40μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 4.3ns @ 5V，50pF | ||
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Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 3-INP DFN1010-6
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN1010-6 | - | 3 | 40μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 4.3ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN1410-6
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C (TA) | X2-DFN1410-6 | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
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Diodes Incorporated |
5,000
|
3 дн. |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN1410-6
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN1410-6 | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
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|
Diodes Incorporated |
4,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN1410-6
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN1410-6 | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN1410-6
|
- | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN1410-6 | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN1010-6
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C (TA) | X2-DFN1010-6 | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
5,000
|
3 дн. |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN1010-6
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN1010-6 | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
4,955
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN1010-6
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN1010-6 | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN1010-6
|
- | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN1010-6 | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Nexperia USA Inc. |
5,000
|
3 дн. |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 1CH 2-INP 6XSON
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 6-XSON (0.9x1) | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Nexperia USA Inc. |
По запросу
|
- |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP 6XSON
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 6-XSON (0.9x1) | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF |
