- Features:
-
- Logic Level - Low:
-
- Current - Output High, Low:
-
- Max Propagation Delay @ V, Max CL:
-
Найдено 9 продуктов
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Number of Circuits | Features | Number of Inputs | Logic Type | Logic Level - Low | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Number of Circuits | Features | Number of Inputs | Logic Type | Logic Level - Low | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
Toshiba Semiconductor and Storage |
По запросу
|
- |
-
|
MIN: 1000 Кратность: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
4 | Open Drain | 2 | NAND Gate | 0.5 V ~ 1.8 V | -,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
По запросу
|
- |
-
|
MIN: 0 Кратность: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
4 | - | 2 | NAND Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
По запросу
|
- |
-
|
MIN: 0 Кратность: 1
|
IC GATE NOR 4CH 2-INP 14DIP
|
4 | - | 2 | NOR Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
По запросу
|
- |
-
|
MIN: 0 Кратность: 1
|
IC INVERTER 6CH 6-INP 14DIP
|
6 | - | 6 | Inverter | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
По запросу
|
- |
-
|
MIN: 0 Кратность: 1
|
IC GATE NAND SCHMITT 4CH 14DIP
|
4 | Schmitt Trigger | 2 | NAND Gate | 0.3 V ~ 1.5 V | 5.2mA,5.2mA | 19ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
По запросу
|
- |
-
|
MIN: 0 Кратность: 1
|
IC INVERTER SCHMITT 6CH 14DIP
|
6 | Schmitt Trigger | 6 | Inverter | 0.3 V ~ 1.5 V | 5.2mA,5.2mA | 21ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
По запросу
|
- |
-
|
MIN: 0 Кратность: 1
|
IC GATE AND 4CH 2-INP 14DIP
|
4 | - | 2 | AND Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
По запросу
|
- |
-
|
MIN: 1000 Кратность: 1
|
IC GATE NAND 3CH 3-INP 14DIP
|
3 | - | 3 | NAND Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
По запросу
|
- |
-
|
MIN: 1000 Кратность: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
4 | - | 2 | XOR (Exclusive OR) | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 17ns @ 6V,50pF |