- Packaging:
-
- Series:
-
- Voltage - Supply:
-
- Operating Temperature:
-
- Package / Case:
-
- Features:
-
- Logic Type:
-
- Logic Level - Low:
-
- Logic Level - High:
-
- Current - Output High, Low:
-
- Max Propagation Delay @ V, Max CL:
-
Найдено 24 продуктов
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Features | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Features | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 10000 Кратность: 1
|
IC GATE NAND SCHMITT 2CH 8X2SON
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XDFN Exposed Pad | Schmitt Trigger | 500nA | NAND Gate | - | - | 4mA,4mA | 7.8ns @ 3.3V,30pF | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND SCHMITT 2CH 8X2SON
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XDFN Exposed Pad | Schmitt Trigger | 500nA | NAND Gate | - | - | 4mA,4mA | 7.8ns @ 3.3V,30pF | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND SCHMITT 2CH 8X2SON
|
- | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XDFN Exposed Pad | Schmitt Trigger | 500nA | NAND Gate | - | - | 4mA,4mA | 7.8ns @ 3.3V,30pF | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 10000 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | NAND Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA,32mA | 4.2ns @ 5V,50pF | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | NAND Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA,32mA | 4.2ns @ 5V,50pF | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
- | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | NAND Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA,32mA | 4.2ns @ 5V,50pF | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 10000 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | NAND Gate | 0.1 V ~ 0.8 V | - | 32mA,32mA | 4.2ns @ 5V,50pF | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | NAND Gate | 0.1 V ~ 0.8 V | - | 32mA,32mA | 4.2ns @ 5V,50pF | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | NAND Gate | 0.1 V ~ 0.8 V | - | 32mA,32mA | 4.2ns @ 5V,50pF | ||||
Nexperia USA Inc. |
По запросу
|
- |
-
|
MIN: 10000 Кратность: 1
|
74LVC2G08GX/SOT1233/X2SON8
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C (TA) | 8-XFDFN Exposed Pad | - | 4μA | AND Gate | 0.7 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA,32mA | 4.8ns @ 5V,50pF | ||||
Nexperia USA Inc. |
9,965
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
74LVC2G08GX/SOT1233/X2SON8
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C (TA) | 8-XFDFN Exposed Pad | - | 4μA | AND Gate | 0.7 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA,32mA | 4.8ns @ 5V,50pF | ||||
Nexperia USA Inc. |
9,965
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
74LVC2G08GX/SOT1233/X2SON8
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C (TA) | 8-XFDFN Exposed Pad | - | 4μA | AND Gate | 0.7 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA,32mA | 4.8ns @ 5V,50pF | ||||
Nexperia USA Inc. |
По запросу
|
- |
-
|
MIN: 10000 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 6.5ns @ 3.3V,30pF | ||||
Nexperia USA Inc. |
9,985
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 6.5ns @ 3.3V,30pF | ||||
Nexperia USA Inc. |
9,985
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
- | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 6.5ns @ 3.3V,30pF | ||||
Nexperia USA Inc. |
По запросу
|
- |
-
|
MIN: 10000 Кратность: 1
|
IC GATE XOR 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | XOR (Exclusive OR) | 0.07 V ~ 0.55 V | 1.2 V ~ 4.11 V | 32mA,32mA | 4.5ns @ 5V,50pF | ||||
Nexperia USA Inc. |
9,985
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE XOR 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | XOR (Exclusive OR) | 0.07 V ~ 0.55 V | 1.2 V ~ 4.11 V | 32mA,32mA | 4.5ns @ 5V,50pF | ||||
Nexperia USA Inc. |
9,985
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE XOR 2CH 2-INP 8X2SON
|
- | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | XOR (Exclusive OR) | 0.07 V ~ 0.55 V | 1.2 V ~ 4.11 V | 32mA,32mA | 4.5ns @ 5V,50pF | ||||
Nexperia USA Inc. |
По запросу
|
- |
-
|
MIN: 10000 Кратность: 1
|
IC GATE OR 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | OR Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA,32mA | 4ns @ 5V,50pF | ||||
Nexperia USA Inc. |
9,973
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE OR 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | OR Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA,32mA | 4ns @ 5V,50pF |