Логика - Ворота и Инверторы - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Features：

Number of Inputs：

Current - Quiescent (Max)：

Logic Type：

Logic Level - Low：

Logic Level - High：

Current - Output High, Low：

Max Propagation Delay @ V, Max CL：

Фото	Наименование	Производитель	Количество	Срок	Цена	КУПИТЬ	Описание	Packaging	Series	Voltage - Supply	Features	Number of Inputs	Current - Quiescent (Max)	Logic Type	Logic Level - Low	Logic Level - High	Current - Output High, Low	Max Propagation Delay @ V, Max CL
Фото	Наименование	Производитель	Количество	Срок	Цена	КУПИТЬ	Описание	Packaging	Series	Voltage - Supply	Features	Number of Inputs	Current - Quiescent (Max)	Logic Type	Logic Level - Low	Logic Level - High	Current - Output High, Low	Max Propagation Delay @ V, Max CL
	TC7S08FU,LF	Toshiba Semiconductor and Storage	40,424	3 дн.	-	IC GATE AND 1CH 2-INP USV MIN: 1 Кратность: 1	IC GATE AND 1CH 2-INP USV	Cut Tape (CT)	TC7S	2 V ~ 6 V	-	2	1μA	AND Gate	0.5 V ~ 1.8 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S08FU,LF	Toshiba Semiconductor and Storage	40,424	3 дн.	-	IC GATE AND 1CH 2-INP USV MIN: 1 Кратность: 1	IC GATE AND 1CH 2-INP USV	-	TC7S	2 V ~ 6 V	-	2	1μA	AND Gate	0.5 V ~ 1.8 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S04FU,LF	Toshiba Semiconductor and Storage	24,000	3 дн.	-	IC INVERTER 1CH 1-INP USV MIN: 3000 Кратность: 1	IC INVERTER 1CH 1-INP USV	Tape & Reel (TR)	TC7S	2 V ~ 6 V	-	1	1μA	Inverter	0.5 V ~ 1.8 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S04FU,LF	Toshiba Semiconductor and Storage	25,638	3 дн.	-	IC INVERTER 1CH 1-INP USV MIN: 1 Кратность: 1	IC INVERTER 1CH 1-INP USV	Cut Tape (CT)	TC7S	2 V ~ 6 V	-	1	1μA	Inverter	0.5 V ~ 1.8 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S04FU,LF	Toshiba Semiconductor and Storage	25,638	3 дн.	-	IC INVERTER 1CH 1-INP USV MIN: 1 Кратность: 1	IC INVERTER 1CH 1-INP USV	-	TC7S	2 V ~ 6 V	-	1	1μA	Inverter	0.5 V ~ 1.8 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S14FU,LF	Toshiba Semiconductor and Storage	21,000	3 дн.	-	IC INVERTER SCHMITT 1CH USV MIN: 3000 Кратность: 1	IC INVERTER SCHMITT 1CH USV	Tape & Reel (TR)	TC7S	2 V ~ 6 V	Schmitt Trigger	1	1μA	Inverter	0.3 V ~ 1.5 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S14FU,LF	Toshiba Semiconductor and Storage	22,773	3 дн.	-	IC INVERTER SCHMITT 1CH USV MIN: 1 Кратность: 1	IC INVERTER SCHMITT 1CH USV	Cut Tape (CT)	TC7S	2 V ~ 6 V	Schmitt Trigger	1	1μA	Inverter	0.3 V ~ 1.5 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S14FU,LF	Toshiba Semiconductor and Storage	22,773	3 дн.	-	IC INVERTER SCHMITT 1CH USV MIN: 1 Кратность: 1	IC INVERTER SCHMITT 1CH USV	-	TC7S	2 V ~ 6 V	Schmitt Trigger	1	1μA	Inverter	0.3 V ~ 1.5 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S00FU,LF	Toshiba Semiconductor and Storage	6,000	3 дн.	-	IC GATE NAND 1CH 2-INP USV MIN: 3000 Кратность: 1	IC GATE NAND 1CH 2-INP USV	Tape & Reel (TR)	TC7S	2 V ~ 6 V	-	2	1μA	NAND Gate	0.5 V ~ 1.8 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S00FU,LF	Toshiba Semiconductor and Storage	7,798	3 дн.	-	IC GATE NAND 1CH 2-INP USV MIN: 1 Кратность: 1	IC GATE NAND 1CH 2-INP USV	Cut Tape (CT)	TC7S	2 V ~ 6 V	-	2	1μA	NAND Gate	0.5 V ~ 1.8 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S00FU,LF	Toshiba Semiconductor and Storage	7,798	3 дн.	-	IC GATE NAND 1CH 2-INP USV MIN: 1 Кратность: 1	IC GATE NAND 1CH 2-INP USV	-	TC7S	2 V ~ 6 V	-	2	1μA	NAND Gate	0.5 V ~ 1.8 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S32FU,LF	Toshiba Semiconductor and Storage	9,000	3 дн.	-	IC GATE OR 1CH 2-INP USV MIN: 3000 Кратность: 1	IC GATE OR 1CH 2-INP USV	Tape & Reel (TR)	TC7S	2 V ~ 6 V	-	2	1μA	OR Gate	0.5 V ~ 1.8 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S32FU,LF	Toshiba Semiconductor and Storage	12,393	3 дн.	-	IC GATE OR 1CH 2-INP USV MIN: 1 Кратность: 1	IC GATE OR 1CH 2-INP USV	Cut Tape (CT)	TC7S	2 V ~ 6 V	-	2	1μA	OR Gate	0.5 V ~ 1.8 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7S32FU,LF	Toshiba Semiconductor and Storage	12,393	3 дн.	-	IC GATE OR 1CH 2-INP USV MIN: 1 Кратность: 1	IC GATE OR 1CH 2-INP USV	-	TC7S	2 V ~ 6 V	-	2	1μA	OR Gate	0.5 V ~ 1.8 V	1.5 V ~ 4.2 V	2.6mA，2.6mA	17ns @ 6V，50pF
	TC7SH02FU,LJ(CT	Toshiba Semiconductor and Storage	6,000	3 дн.	-	IC GATE NOR 1CH 2-INP USV MIN: 3000 Кратность: 1	IC GATE NOR 1CH 2-INP USV	Tape & Reel (TR)	TC7SH	2 V ~ 5.5 V	-	2	2μA	NOR Gate	0.5V	1.5V	8mA，8mA	7.5ns @ 5V，50pF
	TC7SH02FU,LJ(CT	Toshiba Semiconductor and Storage	8,576	3 дн.	-	IC GATE NOR 1CH 2-INP USV MIN: 1 Кратность: 1	IC GATE NOR 1CH 2-INP USV	Cut Tape (CT)	TC7SH	2 V ~ 5.5 V	-	2	2μA	NOR Gate	0.5V	1.5V	8mA，8mA	7.5ns @ 5V，50pF
	TC7SH02FU,LJ(CT	Toshiba Semiconductor and Storage	8,576	3 дн.	-	IC GATE NOR 1CH 2-INP USV MIN: 1 Кратность: 1	IC GATE NOR 1CH 2-INP USV	-	TC7SH	2 V ~ 5.5 V	-	2	2μA	NOR Gate	0.5V	1.5V	8mA，8mA	7.5ns @ 5V，50pF
	TC7SET32FU,LJ(CT	Toshiba Semiconductor and Storage	3,000	3 дн.	-	IC GATE OR 1CH 2-INP USV MIN: 3000 Кратность: 1	IC GATE OR 1CH 2-INP USV	Tape & Reel (TR)	TC7SET	4.5 V ~ 5.5 V	-	2	2μA	OR Gate	0.8V	2V	8mA，8mA	9ns @ 5V，50pF
	TC7SET32FU,LJ(CT	Toshiba Semiconductor and Storage	4,620	3 дн.	-	IC GATE OR 1CH 2-INP USV MIN: 1 Кратность: 1	IC GATE OR 1CH 2-INP USV	Cut Tape (CT)	TC7SET	4.5 V ~ 5.5 V	-	2	2μA	OR Gate	0.8V	2V	8mA，8mA	9ns @ 5V，50pF
	TC7SET32FU,LJ(CT	Toshiba Semiconductor and Storage	4,620	3 дн.	-	IC GATE OR 1CH 2-INP USV MIN: 1 Кратность: 1	IC GATE OR 1CH 2-INP USV	-	TC7SET	4.5 V ~ 5.5 V	-	2	2μA	OR Gate	0.8V	2V	8mA，8mA	9ns @ 5V，50pF

Успешно отправлено