Найдено 30 продуктов
Фото Наименование Производитель Количество Срок Цена КУПИТЬ Описание Packaging Voltage - Supply Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
TC7SZ04F,LJ(CT
Toshiba Semiconductor and Storage
6,000
3 дн.
-
MIN: 3000  Кратность: 1
IC INVERTER 1CH 1-INP SMV
Tape & Reel (TR) 1.8 V ~ 5.5 V - 1 2μA Inverter - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ04F,LJ(CT
Toshiba Semiconductor and Storage
7,365
3 дн.
-
MIN: 1  Кратность: 1
IC INVERTER 1CH 1-INP SMV
Cut Tape (CT) 1.8 V ~ 5.5 V - 1 2μA Inverter - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ04F,LJ(CT
Toshiba Semiconductor and Storage
7,365
3 дн.
-
MIN: 1  Кратность: 1
IC INVERTER 1CH 1-INP SMV
- 1.8 V ~ 5.5 V - 1 2μA Inverter - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ32F,LJ(CT
Toshiba Semiconductor and Storage
12,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE OR 1CH 2-INP SMV
Tape & Reel (TR) 1.8 V ~ 5.5 V - 2 2μA OR Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ32F,LJ(CT
Toshiba Semiconductor and Storage
12,955
3 дн.
-
MIN: 1  Кратность: 1
IC GATE OR 1CH 2-INP SMV
Cut Tape (CT) 1.8 V ~ 5.5 V - 2 2μA OR Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ32F,LJ(CT
Toshiba Semiconductor and Storage
12,955
3 дн.
-
MIN: 1  Кратность: 1
IC GATE OR 1CH 2-INP SMV
- 1.8 V ~ 5.5 V - 2 2μA OR Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ02F,LJ(CT
Toshiba Semiconductor and Storage
3,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE NOR 1CH 2-INP SMV
Tape & Reel (TR) 1.8 V ~ 5.5 V - 2 2μA NOR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ02F,LJ(CT
Toshiba Semiconductor and Storage
3,735
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NOR 1CH 2-INP SMV
Cut Tape (CT) 1.8 V ~ 5.5 V - 2 2μA NOR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ02F,LJ(CT
Toshiba Semiconductor and Storage
3,735
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NOR 1CH 2-INP SMV
- 1.8 V ~ 5.5 V - 2 2μA NOR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ00F,LJ(CT
Toshiba Semiconductor and Storage
3,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE NAND 1CH 2-INP SMV
Tape & Reel (TR) 1.8 V ~ 5.5 V - 2 2μA NAND Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ00F,LJ(CT
Toshiba Semiconductor and Storage
4,458
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NAND 1CH 2-INP SMV
Cut Tape (CT) 1.8 V ~ 5.5 V - 2 2μA NAND Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ00F,LJ(CT
Toshiba Semiconductor and Storage
4,458
3 дн.
-
MIN: 1  Кратность: 1
IC GATE NAND 1CH 2-INP SMV
- 1.8 V ~ 5.5 V - 2 2μA NAND Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ08F,LJ(CT
Toshiba Semiconductor and Storage
По запросу
-
-
MIN: 3000  Кратность: 1
IC GATE AND 1CH 2-INP SMV
Tape & Reel (TR) 1.8 V ~ 5.5 V - 2 2μA AND Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ08F,LJ(CT
Toshiba Semiconductor and Storage
2,865
3 дн.
-
MIN: 1  Кратность: 1
IC GATE AND 1CH 2-INP SMV
Cut Tape (CT) 1.8 V ~ 5.5 V - 2 2μA AND Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ08F,LJ(CT
Toshiba Semiconductor and Storage
2,865
3 дн.
-
MIN: 1  Кратность: 1
IC GATE AND 1CH 2-INP SMV
- 1.8 V ~ 5.5 V - 2 2μA AND Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ14F,LJ(CT
Toshiba Semiconductor and Storage
6,000
3 дн.
-
MIN: 3000  Кратность: 1
IC INVERTER SCHMITT 1CH SMV
Tape & Reel (TR) 1.65 V ~ 5.5 V Schmitt Trigger 1 1μA Inverter 0.2 V ~ 1.2 V 1.4 V ~ 3.6 V 32mA,32mA 5.9ns @ 5V,50pF
TC7SZ14F,LJ(CT
Toshiba Semiconductor and Storage
8,694
3 дн.
-
MIN: 1  Кратность: 1
IC INVERTER SCHMITT 1CH SMV
Cut Tape (CT) 1.65 V ~ 5.5 V Schmitt Trigger 1 1μA Inverter 0.2 V ~ 1.2 V 1.4 V ~ 3.6 V 32mA,32mA 5.9ns @ 5V,50pF
TC7SZ14F,LJ(CT
Toshiba Semiconductor and Storage
8,694
3 дн.
-
MIN: 1  Кратность: 1
IC INVERTER SCHMITT 1CH SMV
- 1.65 V ~ 5.5 V Schmitt Trigger 1 1μA Inverter 0.2 V ~ 1.2 V 1.4 V ~ 3.6 V 32mA,32mA 5.9ns @ 5V,50pF
TC7SZ86F,LJ(CT
Toshiba Semiconductor and Storage
По запросу
-
-
MIN: 3000  Кратность: 1
IC GATE XOR 1CH 2-INP SMV
Tape & Reel (TR) 1.8 V ~ 5.5 V - 2 2μA XOR (Exclusive OR) - - 32mA,32mA 5.4ns @ 5V,50pF
TC7SZ86F,LJ(CT
Toshiba Semiconductor and Storage
2,023
3 дн.
-
MIN: 1  Кратность: 1
IC GATE XOR 1CH 2-INP SMV
Cut Tape (CT) 1.8 V ~ 5.5 V - 2 2μA XOR (Exclusive OR) - - 32mA,32mA 5.4ns @ 5V,50pF