- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Features：
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- Logic Level - Low：
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- Logic Level - High：
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- Current - Output High, Low：
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Найдено 83 продуктов
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Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Features | Number of Inputs | Current - Quiescent (Max) | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Features | Number of Inputs | Current - Quiescent (Max) | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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Nexperia USA Inc. |
5,000
|
3 дн. |
-
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MIN: 5000 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8XSON
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XSON (1.35x1) | Open Drain | 2 | 4μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | -，32mA | 3.3ns @ 5V，50pF | ||
|
|
|
Nexperia USA Inc. |
5,190
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8XSON
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XSON (1.35x1) | Open Drain | 2 | 4μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | -，32mA | 3.3ns @ 5V，50pF | ||
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|
|
Nexperia USA Inc. |
5,190
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8XSON
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XSON (1.35x1) | Open Drain | 2 | 4μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | -，32mA | 3.3ns @ 5V，50pF | ||
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|
|
Nexperia USA Inc. |
5,000
|
3 дн. |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8XSON
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XSON (1.35x1) | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
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|
|
Nexperia USA Inc. |
5,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8XSON
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XSON (1.35x1) | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Nexperia USA Inc. |
5,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8XSON
|
- | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XSON (1.35x1) | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Nexperia USA Inc. |
5,000
|
3 дн. |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8XSON
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XSON (1.35x1) | Open Drain | 2 | 4μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | -，32mA | 3.3ns @ 5V，50pF | ||
|
|
|
Nexperia USA Inc. |
5,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8XSON
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XSON (1.35x1) | Open Drain | 2 | 4μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | -，32mA | 3.3ns @ 5V，50pF | ||
|
|
|
Nexperia USA Inc. |
5,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8XSON
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XSON (1.35x1) | Open Drain | 2 | 4μA | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | -，32mA | 3.3ns @ 5V，50pF | ||
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Diodes Incorporated |
По запросу
|
- |
-
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MIN: 5000 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1210-8
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN1210-8 | - | 2 | 40μA | - | - | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
3,065
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1210-8
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN1210-8 | - | 2 | 40μA | - | - | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
3,065
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1210-8
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN1210-8 | - | 2 | 40μA | - | - | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1410-8
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN1410-8 | - | 2 | 40μA | - | - | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
1,567
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1410-8
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN1410-8 | - | 2 | 40μA | - | - | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
1,567
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1410-8
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN1410-8 | - | 2 | 40μA | - | - | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN2010-8
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN2010-8 | - | 2 | 40μA | - | - | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
1,269
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN2010-8
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN2010-8 | - | 2 | 40μA | - | - | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
1,269
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN2010-8
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN2010-8 | - | 2 | 40μA | - | - | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1210-8
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN1210-8 | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
4,945
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1210-8
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN1210-8 | - | 2 | 500nA | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF |
