- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Features：
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- Current - Quiescent (Max)：
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- Logic Level - Low：
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- Logic Level - High：
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- Current - Output High, Low：
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- Max Propagation Delay @ V, Max CL：
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Найдено 30 продуктов
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Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Features | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Features | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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Texas Instruments |
7,721
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC INVERTER 1CH 1-INP 4XDFN
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 4-XDFN (0.8x0.8) | - | 1 | 10μA | Inverter | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 3.7ns @ 5V，50pF | ||
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|
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Diodes Incorporated |
5,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC INVERTER 1CH 1-INP 4X2DFN
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | Open Drain | 1 | 500nA | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | -，4mA | 10.5ns @ 3.3V，30pF | ||
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Texas Instruments |
10,948
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NOR 1CH 2-INP 4X2SON
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 2 | 500nA | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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|
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Texas Instruments |
9,802
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC INVERTER 1CH 1-INP 4X2SON
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 1 | 500nA | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 5.4ns @ 3.3V，30pF | ||
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|
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Texas Instruments |
8,900
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE AND 1CH 2-INP 4X2SON
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 2 | 500nA | AND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.2ns @ 3.3V，30pF | ||
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|
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Texas Instruments |
8,999
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE OR 1CH 2-INP 4X2SON
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 2 | 500nA | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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|
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Diodes Incorporated |
4,989
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN0808-4
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
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|
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Diodes Incorporated |
4,835
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE OR 1CH 2-INP 4X2DFN
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | - | 2 | 500nA | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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|
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Diodes Incorporated |
4,480
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE XOR 1CH 2-INP DFN0808-4
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | 500nA | XOR (Exclusive OR) | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 7.1ns @ 3.3V，30pF | ||
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Diodes Incorporated |
4,425
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NOR 1CH 2-INP DFN0808-4
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | 500nA | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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Diodes Incorporated |
4,022
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE AND 1CH 2-INP 4X2DFN
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | - | 2 | 500nA | AND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.2ns @ 3.3V，30pF | ||
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Diodes Incorporated |
3,794
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC INVERTER 1CH 1-INP 4X2DFN
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | - | 1 | 500nA | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 5.4ns @ 3.3V，30pF | ||
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Diodes Incorporated |
4,332
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC INVERTER 1CH 1-INP DFN0808-4
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN0808-4 | - | 1 | 200μA | Inverter | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 5ns @ 5V，50pF | ||
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Diodes Incorporated |
3,900
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN0808-4
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | 200μA | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 5.5ns @ 5V，50pF | ||
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Diodes Incorporated |
3,730
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC INVERTER SCHMITT 1CH DFN0808
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN0808-4 | Schmitt Trigger | 1 | 200μA | Inverter | 0.3 V ~ 1.45 V | 1.2 V ~ 3.33 V | 32mA，32mA | 6.5ns @ 5V，50pF | ||
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Diodes Incorporated |
2,834
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE OR 1CH 2-INP DFN0808-4
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | 200μA | OR Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 5.5ns @ 5V，50pF | ||
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|
|
Diodes Incorporated |
2,005
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE AND 1CH 2-INP 4X2DFN
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | - | 2 | 200μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 5.5ns @ 5V，50pF | ||
|
|
|
Texas Instruments |
3,432
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP 4X2SON
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 4-X2SON (0.8x0.8) | - | 2 | 10μA | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 4.3ns @ 5V，50pF | ||
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|
Texas Instruments |
2,119
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NOR 1CH 2-INP 4XDFN
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 4-XDFN (0.8x0.8) | - | 2 | 10μA | NOR Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 4.5ns @ 5V，50pF | ||
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|
|
Texas Instruments |
2,500
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 1CH 2-INP 4X2SON
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 2 | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF |
