Найдено 29 продуктов
Фото Наименование Производитель Количество Срок Цена КУПИТЬ Описание Voltage - Supply Operating Temperature Package / Case Supplier Device Package Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
TC7SZ08FU,LJ(CT
Toshiba Semiconductor and Storage
15,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE AND 1CH 2-INP USV
1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA AND Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ04FU,LJ(CT
Toshiba Semiconductor and Storage
12,000
3 дн.
-
MIN: 3000  Кратность: 1
IC INVERTER 1CH 1-INP USV
1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 1 2μA Inverter - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ32FU,LJ(CT
Toshiba Semiconductor and Storage
3,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE OR 1CH 2-INP USV
1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA OR Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ00FU,LJ(CT
Toshiba Semiconductor and Storage
9,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE NAND 1CH 2-INP USV
1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA NAND Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ08FE,LJ(CT
Toshiba Semiconductor and Storage
8,000
3 дн.
-
MIN: 4000  Кратность: 1
IC GATE AND 1CH 2-INP ESV
1.65 V ~ 5.5 V -40°C ~ 85°C SOT-553 ESV - 2 2μA AND Gate - - 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ14FU,LJ(CT
Toshiba Semiconductor and Storage
3,000
3 дн.
-
MIN: 3000  Кратность: 1
IC INVERTER SCHMITT 1CH USV
1.65 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV Schmitt Trigger 1 1μA Inverter 0.2 V ~ 1.2 V 1.4 V ~ 3.6 V 32mA,32mA 5.9ns @ 5V,50pF
TC7SZ02FU,LJ(CT
Toshiba Semiconductor and Storage
3,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE NOR 1CH 2-INP USV
1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA NOR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ02FE,LJ(CT
Toshiba Semiconductor and Storage
4,000
3 дн.
-
MIN: 4000  Кратность: 1
IC GATE NOR 1CH 2-INP ESV
1.65 V ~ 5.5 V -40°C ~ 85°C SOT-553 ESV - 2 2μA NOR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ86FU,LJ(CT
Toshiba Semiconductor and Storage
3,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE XOR 1CH 2-INP USV
1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV - 2 2μA XOR (Exclusive OR) - - 32mA,32mA 5.4ns @ 5V,50pF
TC7SZ04F,LJ(CT
Toshiba Semiconductor and Storage
6,000
3 дн.
-
MIN: 3000  Кратность: 1
IC INVERTER 1CH 1-INP SMV
1.8 V ~ 5.5 V -40°C ~ 85°C SC-74A,SOT-753 SMV - 1 2μA Inverter - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ00FE,LJ(CT
Toshiba Semiconductor and Storage
4,000
3 дн.
-
MIN: 4000  Кратность: 1
IC GATE NAND 1CH 2-INP ESV
1.65 V ~ 5.5 V -40°C ~ 85°C SOT-553 ESV - 2 2μA NAND Gate - - 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ86FE,LJ(CT
Toshiba Semiconductor and Storage
4,000
3 дн.
-
MIN: 4000  Кратность: 1
IC GATE XOR 1CH 2-INP ESV
1.65 V ~ 5.5 V -40°C ~ 85°C SOT-553 ESV - 2 2μA XOR (Exclusive OR) - - 32mA,32mA 5.4ns @ 5V,50pF
TC7SZ32F,LJ(CT
Toshiba Semiconductor and Storage
12,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE OR 1CH 2-INP SMV
1.8 V ~ 5.5 V -40°C ~ 85°C SC-74A,SOT-753 SMV - 2 2μA OR Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ05FE,LJ(CT
Toshiba Semiconductor and Storage
4,000
3 дн.
-
MIN: 4000  Кратность: 1
IC INVERTER OD 1CH 1-INP ESV
1.65 V ~ 5.5 V -40°C ~ 85°C SOT-553 ESV Open Drain 1 2μA Inverter - - -,32mA 3.5ns @ 5V,50pF
TC7SZ02F,LJ(CT
Toshiba Semiconductor and Storage
3,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE NOR 1CH 2-INP SMV
1.8 V ~ 5.5 V -40°C ~ 85°C SC-74A,SOT-753 SMV - 2 2μA NOR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ00F,LJ(CT
Toshiba Semiconductor and Storage
3,000
3 дн.
-
MIN: 3000  Кратность: 1
IC GATE NAND 1CH 2-INP SMV
1.8 V ~ 5.5 V -40°C ~ 85°C SC-74A,SOT-753 SMV - 2 2μA NAND Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ05FU,LJ(CT
Toshiba Semiconductor and Storage
По запросу
-
-
MIN: 3000  Кратность: 1
IC INVERTER OD 1CH 1-INP USV
1.8 V ~ 5.5 V -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV Open Drain 1 2μA Inverter - - -,32mA 4.3ns @ 5V,50pF
TC7SZ32FE,LJ(CT
Toshiba Semiconductor and Storage
По запросу
-
-
MIN: 4000  Кратность: 1
IC GATE OR 1CH 2-INP ESV
1.65 V ~ 5.5 V -40°C ~ 85°C SOT-553 ESV - 2 2μA OR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ08F,LJ(CT
Toshiba Semiconductor and Storage
По запросу
-
-
MIN: 3000  Кратность: 1
IC GATE AND 1CH 2-INP SMV
1.8 V ~ 5.5 V -40°C ~ 85°C SC-74A,SOT-753 SMV - 2 2μA AND Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ04FE,LJ(CT
Toshiba Semiconductor and Storage
По запросу
-
-
MIN: 4000  Кратность: 1
IC INVERTER 1CH 1-INP ESV
1.65 V ~ 5.5 V -40°C ~ 85°C SOT-553 ESV - 1 2μA Inverter - - 32mA,32mA 4.3ns @ 5V,50pF