- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Features:
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- Current - Quiescent (Max):
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- Logic Type:
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- Logic Level - Low:
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- Logic Level - High:
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- Current - Output High, Low:
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- Max Propagation Delay @ V, Max CL:
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Найдено 55 продуктов
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Features | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Features | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
Texas Instruments |
3,000
|
3 дн. |
-
|
MIN: 3000 Кратность: 1
|
IC INVERTER 1CH 1-INP 4XDFN
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 4-XDFN (0.8x0.8) | - | 1 | 10μA | Inverter | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 3.7ns @ 5V,50pF | ||||
Diodes Incorporated |
5,000
|
3 дн. |
-
|
MIN: 5000 Кратность: 1
|
IC INVERTER 1CH 1-INP 4X2DFN
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | Open Drain | 1 | 500nA | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | -,4mA | 10.5ns @ 3.3V,30pF | ||||
Texas Instruments |
6,000
|
3 дн. |
-
|
MIN: 3000 Кратность: 1
|
IC INVERTER 1CH 1-INP 4X2SON
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 1 | 500nA | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 5.4ns @ 3.3V,30pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN0808-4
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 6.5ns @ 3.3V,30pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE OR 1CH 2-INP DFN0808-4
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C (TA) | X2-DFN0808-4 | - | 2 | 500nA | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 6.4ns @ 3.3V,30pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE OR 1CH 2-INP 4X2DFN
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | - | 2 | 500nA | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 6.4ns @ 3.3V,30pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE XOR 1CH 2-INP DFN0808-4
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C (TA) | X2-DFN0808-4 | - | 2 | 500nA | XOR (Exclusive OR) | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 7.1ns @ 3.3V,30pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE XOR 1CH 2-INP DFN0808-4
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | 500nA | XOR (Exclusive OR) | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 7.1ns @ 3.3V,30pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NOR 1CH 2-INP DFN0808-4
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C (TA) | X2-DFN0808-4 | - | 2 | 500nA | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 6.4ns @ 3.3V,30pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NOR 1CH 2-INP DFN0808-4
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | 500nA | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 6.4ns @ 3.3V,30pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE AND 1CH 2-INP 4X2DFN
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | - | 2 | 500nA | AND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 6.2ns @ 3.3V,30pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC INVERTER 1CH 1-INP 4X2DFN
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | - | 1 | 500nA | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA,4mA | 5.4ns @ 3.3V,30pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC INVERTER 1CH 1-INP DFN0808-4
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN0808-4 | - | 1 | 200μA | Inverter | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 5ns @ 5V,50pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 1CH 2-INP DFN0808-4
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | 200μA | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 5.5ns @ 5V,50pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC INVERTER SCHMITT 1CH DFN0808
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN0808-4 | Schmitt Trigger | 1 | 200μA | Inverter | 0.3 V ~ 1.45 V | 1.2 V ~ 3.33 V | 32mA,32mA | 6.5ns @ 5V,50pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE OR 1CH 2-INP DFN0808-4
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | 200μA | OR Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 5.5ns @ 5V,50pF | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE AND 1CH 2-INP 4X2DFN
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | - | 2 | 200μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 5.5ns @ 5V,50pF | ||||
Texas Instruments |
По запросу
|
- |
-
|
MIN: 3000 Кратность: 1
|
IC GATE OR 1CH 2-INP 4X2SON
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 4-X2SON (0.8x0.8) | - | 2 | 10μA | OR Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 4ns @ 5V,50pF | ||||
Nexperia USA Inc. |
По запросу
|
- |
-
|
MIN: 10000 Кратность: 1
|
IC GATE NAND SCHMITT 1CH 5X2SON
|
74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 5-X2SON (0.80x0.80) | Schmitt Trigger | 2 | 500nA | NAND Gate | 0.1 V ~ 0.88 V | 0.6 V ~ 2.29 V | 4mA,4mA | 7.8ns @ 3.3V,30pF | ||||
Nexperia USA Inc. |
По запросу
|
- |
-
|
MIN: 10000 Кратность: 1
|
IC GATE AND 1CH 2-INP 5X2SON
|
74AXP | 0.7 V ~ 2.75 V | -40°C ~ 85°C | 5-X2SON (0.80x0.80) | - | 2 | 600nA | AND Gate | 0.7V | 1.6V | 8mA,8mA | 2.8ns @ 2.5V,5pF |