- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Logic Level - Low:
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- Logic Level - High:
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Найдено 49 продуктов
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Number of Circuits | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Фото | Наименование | Производитель | Количество | Срок | Цена | КУПИТЬ | Описание | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Number of Circuits | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | ||
ON Semiconductor |
18,000
|
3 дн. |
-
|
MIN: 3000 Кратность: 1
|
IC GATE XOR 2CH 2-INP US8
|
Tape & Reel (TR) | 7WZ | 1.65 V ~ 5.5 V | -40°C ~ 85°C | 8-VFSOP (0.091",2.30mm Width) | US8 | 2 | 2 | 1μA | XOR (Exclusive OR) | - | - | ||||
ON Semiconductor |
20,014
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE XOR 2CH 2-INP US8
|
Cut Tape (CT) | 7WZ | 1.65 V ~ 5.5 V | -40°C ~ 85°C | 8-VFSOP (0.091",2.30mm Width) | US8 | 2 | 2 | 1μA | XOR (Exclusive OR) | - | - | ||||
ON Semiconductor |
20,014
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE XOR 2CH 2-INP US8
|
- | 7WZ | 1.65 V ~ 5.5 V | -40°C ~ 85°C | 8-VFSOP (0.091",2.30mm Width) | US8 | 2 | 2 | 1μA | XOR (Exclusive OR) | - | - | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 10000 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | 8-X2SON (1.35x0.8) | 2 | 2 | 4μA | NAND Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | 8-X2SON (1.35x0.8) | 2 | 2 | 4μA | NAND Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
- | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | 8-X2SON (1.35x0.8) | 2 | 2 | 4μA | NAND Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 10000 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | 8-X2SON (1.35x0.8) | 2 | 2 | 4μA | NAND Gate | 0.1 V ~ 0.8 V | - | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | 8-X2SON (1.35x0.8) | 2 | 2 | 4μA | NAND Gate | 0.1 V ~ 0.8 V | - | ||||
Nexperia USA Inc. |
10,000
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | 8-X2SON (1.35x0.8) | 2 | 2 | 4μA | NAND Gate | 0.1 V ~ 0.8 V | - | ||||
Diodes Incorporated |
30,000
|
3 дн. |
-
|
MIN: 5000 Кратность: 1
|
IC GATE AND 1CH 3-INP DFN1010-6
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 1 | 3 | 40μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | ||||
Diodes Incorporated |
7,749
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE AND 1CH 3-INP DFN1010-6
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 1 | 3 | 40μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 1 Кратность: 1
|
IC GATE AND 1CH 3-INP DFN1010-6
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 1 | 3 | 40μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1210-8
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1210-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||||
Diodes Incorporated |
3,065
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1210-8
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1210-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||||
Diodes Incorporated |
3,065
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1210-8
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1210-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1410-8
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1410-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||||
Diodes Incorporated |
1,567
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1410-8
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1410-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||||
Diodes Incorporated |
1,567
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN1410-8
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1410-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||||
Diodes Incorporated |
По запросу
|
- |
-
|
MIN: 5000 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN2010-8
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN2010-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||||
Diodes Incorporated |
1,269
|
3 дн. |
-
|
MIN: 1 Кратность: 1
|
IC GATE NAND 2CH 2-INP DFN2010-8
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN2010-8 | 2 | 2 | 40μA | NAND Gate | - | - |