Производитель:
Найдено 27 продуктов
Фото Наименование Производитель Количество Срок Цена КУПИТЬ Описание Packaging Operating Temperature Package / Case Supplier Device Package Number of Circuits -3db Bandwidth On-State Resistance (Max) Channel-to-Channel Matching (ΔRon) Charge Injection Current - Leakage (IS(off)) (Max) Voltage - Supply, Single (V+) Switch Time (Ton, Toff) (Max) Channel Capacitance (CS(off), CD(off))
ISL54053IHZ-T
Renesas Electronics America Inc.
По запросу
-
-
MIN: 3000  Кратность: 1
IC SWITCH SPDT SGL SOT23-6
Tape & Reel (TR) -40°C ~ 85°C (TA) SOT-23-6 SOT-23-6 1 190MHz 860 mOhm (Typ) 4 mOhm 26pC 10nA 1.8 V ~ 5.5 V 24ns,10ns 16pF
ISL54053IHZ-T
Renesas Electronics America Inc.
2,233
3 дн.
-
MIN: 1  Кратность: 1
IC SWITCH SPDT SGL SOT23-6
Cut Tape (CT) -40°C ~ 85°C (TA) SOT-23-6 SOT-23-6 1 190MHz 860 mOhm (Typ) 4 mOhm 26pC 10nA 1.8 V ~ 5.5 V 24ns,10ns 16pF
ISL54053IHZ-T
Renesas Electronics America Inc.
2,233
3 дн.
-
MIN: 1  Кратность: 1
IC SWITCH SPDT SGL SOT23-6
- -40°C ~ 85°C (TA) SOT-23-6 SOT-23-6 1 190MHz 860 mOhm (Typ) 4 mOhm 26pC 10nA 1.8 V ~ 5.5 V 24ns,10ns 16pF
ISL54053IRUZ-T
Renesas Electronics America Inc.
По запросу
-
-
MIN: 3000  Кратность: 1
IC SWITCH SPDT 6UTDFN
Tape & Reel (TR) -40°C ~ 85°C (TA) 6-UFDFN 6-UTDFN (1.2x1.0) 1 190MHz 860 mOhm (Typ) 4 mOhm 26pC 10nA 1.8 V ~ 5.5 V 24ns,10ns 16pF
ISL54053IRUZ-T
Renesas Electronics America Inc.
952
3 дн.
-
MIN: 1  Кратность: 1
IC SWITCH SPDT 6UTDFN
Cut Tape (CT) -40°C ~ 85°C (TA) 6-UFDFN 6-UTDFN (1.2x1.0) 1 190MHz 860 mOhm (Typ) 4 mOhm 26pC 10nA 1.8 V ~ 5.5 V 24ns,10ns 16pF
ISL54053IRUZ-T
Renesas Electronics America Inc.
952
3 дн.
-
MIN: 1  Кратность: 1
IC SWITCH SPDT 6UTDFN
- -40°C ~ 85°C (TA) 6-UFDFN 6-UTDFN (1.2x1.0) 1 190MHz 860 mOhm (Typ) 4 mOhm 26pC 10nA 1.8 V ~ 5.5 V 24ns,10ns 16pF
MAX14763ETA+T
Maxim Integrated
По запросу
-
-
MIN: 2500  Кратность: 1
IC SWITCH SPDT 2 OHM 8WDFN
Tape & Reel (TR) -40°C ~ 85°C (TA) 8-WDFN Exposed Pad 8-TDFN (3x3) 1 100MHz 2 Ohm 5.1 mOhm 1370pC 250nA 3 V ~ 5.5 V 1.8μs,1ns -
MAX14763ETA+T
Maxim Integrated
1,059
3 дн.
-
MIN: 1  Кратность: 1
IC SWITCH SPDT 2 OHM 8WDFN
Cut Tape (CT) -40°C ~ 85°C (TA) 8-WDFN Exposed Pad 8-TDFN (3x3) 1 100MHz 2 Ohm 5.1 mOhm 1370pC 250nA 3 V ~ 5.5 V 1.8μs,1ns -
MAX14763ETA+T
Maxim Integrated
1,059
3 дн.
-
MIN: 1  Кратность: 1
IC SWITCH SPDT 2 OHM 8WDFN
- -40°C ~ 85°C (TA) 8-WDFN Exposed Pad 8-TDFN (3x3) 1 100MHz 2 Ohm 5.1 mOhm 1370pC 250nA 3 V ~ 5.5 V 1.8μs,1ns -
NLAS4684MR2G
ON Semiconductor
4,000
3 дн.
-
MIN: 4000  Кратность: 1
IC SWITCH DUAL SPDT MICRO10
Tape & Reel (TR) -55°C ~ 125°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-Micro 2 9.5MHz 800 mOhm 60 mOhm 15pC 1μA 1.8 V ~ 5.5 V 30ns,30ns 102pF,104pF
NLAS4684MR2G
ON Semiconductor
4,907
3 дн.
-
MIN: 1  Кратность: 1
IC SWITCH DUAL SPDT MICRO10
Cut Tape (CT) -55°C ~ 125°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-Micro 2 9.5MHz 800 mOhm 60 mOhm 15pC 1μA 1.8 V ~ 5.5 V 30ns,30ns 102pF,104pF
NLAS4684MR2G
ON Semiconductor
4,907
3 дн.
-
MIN: 1  Кратность: 1
IC SWITCH DUAL SPDT MICRO10
- -55°C ~ 125°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-Micro 2 9.5MHz 800 mOhm 60 mOhm 15pC 1μA 1.8 V ~ 5.5 V 30ns,30ns 102pF,104pF
NLAS4684FCTCG
ON Semiconductor
По запросу
-
-
MIN: 3000  Кратность: 1
IC SWITCH DUAL SPDT 10MICROBUMP
Tape & Reel (TR) -55°C ~ 125°C (TA) 10-UFBGA,FCBGA 10-Microbump (1.97x1.47) 2 9.5MHz 800 mOhm 60 mOhm 15pC 1μA 1.8 V ~ 5.5 V 30ns,30ns 102pF,104pF
NLAS4684FCTCG
ON Semiconductor
2,800
3 дн.
-
MIN: 1  Кратность: 1
IC SWITCH DUAL SPDT 10MICROBUMP
Cut Tape (CT) -55°C ~ 125°C (TA) 10-UFBGA,FCBGA 10-Microbump (1.97x1.47) 2 9.5MHz 800 mOhm 60 mOhm 15pC 1μA 1.8 V ~ 5.5 V 30ns,30ns 102pF,104pF
NLAS4684FCTCG
ON Semiconductor
2,800
3 дн.
-
MIN: 1  Кратность: 1
IC SWITCH DUAL SPDT 10MICROBUMP
- -55°C ~ 125°C (TA) 10-UFBGA,FCBGA 10-Microbump (1.97x1.47) 2 9.5MHz 800 mOhm 60 mOhm 15pC 1μA 1.8 V ~ 5.5 V 30ns,30ns 102pF,104pF
NLAS4684MNR2G
ON Semiconductor
По запросу
-
-
MIN: 3000  Кратность: 1
IC SWITCH DUAL SPDT 10DFN
Tape & Reel (TR) -55°C ~ 125°C (TA) 10-VFDFN Exposed Pad 10-DFN (3x3) 2 9.5MHz 800 mOhm 60 mOhm 15pC 1μA 1.8 V ~ 5.5 V 30ns,30ns 102pF,104pF
NLAS4684MNR2G
ON Semiconductor
3,222
3 дн.
-
MIN: 1  Кратность: 1
IC SWITCH DUAL SPDT 10DFN
Cut Tape (CT) -55°C ~ 125°C (TA) 10-VFDFN Exposed Pad 10-DFN (3x3) 2 9.5MHz 800 mOhm 60 mOhm 15pC 1μA 1.8 V ~ 5.5 V 30ns,30ns 102pF,104pF
NLAS4684MNR2G
ON Semiconductor
3,222
3 дн.
-
MIN: 1  Кратность: 1
IC SWITCH DUAL SPDT 10DFN
- -55°C ~ 125°C (TA) 10-VFDFN Exposed Pad 10-DFN (3x3) 2 9.5MHz 800 mOhm 60 mOhm 15pC 1μA 1.8 V ~ 5.5 V 30ns,30ns 102pF,104pF
NLAS4684FCT1G
ON Semiconductor
По запросу
-
-
MIN: 3000  Кратность: 1
IC SWITCH DUAL SPDT 10MICROBUMP
Tape & Reel (TR) -55°C ~ 125°C (TA) 10-UFBGA,FCBGA 10-Microbump (1.97x1.47) 2 9.5MHz 800 mOhm 60 mOhm 15pC 1μA 1.8 V ~ 5.5 V 30ns,30ns 102pF,104pF
NLAS4684FCT1G
ON Semiconductor
По запросу
-
-
MIN: 1  Кратность: 1
IC SWITCH DUAL SPDT 10MICROBUMP
Cut Tape (CT) -55°C ~ 125°C (TA) 10-UFBGA,FCBGA 10-Microbump (1.97x1.47) 2 9.5MHz 800 mOhm 60 mOhm 15pC 1μA 1.8 V ~ 5.5 V 30ns,30ns 102pF,104pF